IP Library › Granted Patent US 9,461,081
Granted Patent B2
US 9,461,081 · App. 14/976,905 · Granted Oct 4, 2016

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Inventors: Tomoharu Ogita (Kumamoto, JP); Atsushi Yamamoto (Kumamoto, JP); Keiji Tatani (Kumamoto, JP); Yoichi Ootsuka (Kumamoto, JP); Kiyotaka Tabuchi (Kanagawa, JP)
Assignee: Sony Corporation
H01L27/14621H01L27/14623H01L27/14627H01L27/14645H01L27/14685H04N9/045
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Quick Facts
Patent No.
US 9,461,081
App. No.
14/976,905
Granted
Oct 4, 2016
Kind
B2
Abstract

An imaging device includes a plurality of photoelectric conversion elements, a plurality of color filter components having a first color filter component and a second color filter component; a light shielding portion, at least a part of which is disposed between the first and second color filter components in a cross-section view; and a transparent film, at least a first part of which is disposed between the first color filter component and the light shielding portion in the cross-section view. A surface of the transparent film facing to the first and second color filter components is nonplanar, and a thickness of the transparent film is less than a thickness of the light shielding portion.

Claims (50)

1. An imaging device comprising:

a plurality of photoelectric conversion elements;

a plurality of color filter components including a first color filter component and a second color filter component;

a light shielding portion, at least a part of the light shielding portion disposed between the first color filter component and the second color filter component in a cross-section view; and

a transparent film, at least a part of the transparent film disposed between the first color filter component and the light shielding portion in the cross-section view, wherein

a surface of the transparent film facing to the first and second color filter components is nonplanar, and

a thickness of the transparent film is less than a thickness of the light shielding portion.

2. The imaging device according to claim 1 , wherein the plurality of photoelectric conversion elements includes a first photoelectric conversion element corresponding to the first color filter component, and a second photoelectric conversion element corresponding to the second color filter component.

3. The imaging device according to claim 1 , further comprising:

a semiconductor substrate having a first side and a second side opposite to the first side, wherein

the first side is a light-incident side, and

the semiconductor substrate includes the plurality of photoelectric conversion elements.

4. The imaging device according to claim 3 , further comprising an insulating film disposed adjacent to the first side.

5. The imaging device according to claim 4 , wherein the insulating film is disposed between the transparent film and the first side in the cross-section view.

6. The imaging device according to claim 1 , wherein the transparent film is in contact with the first and second color filter components.

7. The imaging device according to claim 1 , further comprising an element isolation region disposed between adjacent ones of the plurality of photoelectric conversion elements.

8. The imaging device according to claim 1 , wherein the transparent film includes an adhesive film.

9. The imaging device according to claim 1 , wherein the first and second color filters are planarized.

10. The imaging device according to claim 1 , further comprising:

a first microlens disposed on the first color filter component, and

a second microlens disposed on the second color filter component.

11. The imaging device according to claim 1 , wherein the transparent film includes a material selected from the group including an acrylic resin, a phenolic resin, a siloxane resin, a copolymer thereof, and an epoxy resin.

12. The imaging device according to claim 1 , wherein the transparent film comprises an oxide film.

13. The imaging device according to claim 12 , wherein the oxide film is provided on one surface of the light shielding portion.

14. The imaging device according to claim 1 , wherein a thickness of respective ones of the plurality of color filter components is 100 nm to 1 μm.

15. The imaging device according to claim 1 , wherein the plurality of color filter components include filters of at least two different colors selected from green, red, and blue.

16. The imaging device according to claim 1 , wherein the plurality of color filter components includes an ND filter.

17. The imaging device according to claim 1 , wherein the transparent film comprises a nitride film.

18. The imaging device according to claim 1 , wherein the light shielding portion includes a material selected from the group consisting of aluminum and tungsten.

19. The imaging device according to claim 1 , wherein the light shielding portion includes a material selected from the group consisting of carbon black and titanium black.

20. An electronic apparatus, comprising:

an imaging device including:

a plurality of photoelectric conversion elements;

a plurality of color filter components including a first color filter component and a second color filter component;

a light shielding portion, at least a part of the light shielding portion disposed between the first color filter component and the second color filter component in a cross-section view; and

a transparent film, at least a part of the transparent film disposed between the first color filter component and the light shielding portion in the cross-section view, wherein

a surface of the transparent film facing to the first and second color filter components is nonplanar, and

a thickness of the transparent film is less than a thickness of the light shielding portion.

21. The electronic apparatus according to claim 20 , wherein the plurality of photoelectric conversion elements includes a first photoelectric conversion element corresponding to the first color filter component, and a second photoelectric conversion element corresponding to the second color filter component.

22. The electronic apparatus according to claim 20 , further comprising:

a semiconductor substrate having a first side and a second side opposite to the first side, wherein

the first side is a light-incident side, and

the semiconductor substrate includes the plurality of photoelectric conversion elements.

23. The electronic apparatus according to claim 22 , further comprising an insulating film disposed adjacent to the first side.

24. The electronic apparatus according to claim 23 , wherein the insulating film is disposed between the transparent film and the first side in the cross-section view.

25. The electronic apparatus according to claim 20 , wherein the transparent film is in contact with the first and second color filter components.

26. The electronic apparatus according to claim 20 , wherein the transparent film includes an adhesive film.

27. The electronic apparatus according to claim 20 , wherein the transparent film comprises an oxide film provided on one surface of the light shielding portion.

28. The electronic apparatus according to claim 20 , wherein the transparent film comprises a nitride film.

29. The electronic apparatus according to claim 20 , wherein the light shielding portion includes a material selected from the group consisting of aluminum and tungsten.

Priority Claims (2)
JP 2011-055631 · Mar 14, 2011 · national
JP 2012-044006 · Feb 29, 2012 · national
Continuity (4)
Continuation 14277383 · May 14, 2014
Continuation 13548900 · Jul 13, 2012
Continuation In Part 13362722 · Jan 31, 2012
Related Publication 20160111462A1 · Apr 21, 2016