Granted Patent B2

US 9,824,737 · App. 14/977,671 · Granted Nov 21, 2017

Abstract

Claims (34)

1. A memory circuit, comprising:

a first set of memory cells configured to operate in a direct access mode or in a refresh mode;

a second set of memory cells configured to operate in the direct access mode or in the refresh mode;

a controller configured to receive a write request and to;

execute the write request for a set of memory cells being in the direct access mode; and

buffer the write request for later execution for a set of memory cells being in the refresh mode;

wherein the controller is configured to execute a write request at a first write speed for a memory cell being in the direct access mode and at a second write speed for a buffered write request of a memory cell being in the refresh mode, the first write speed being slower than the second write speed.

2. The memory circuit of claim 1 , wherein the first set of memory cells is configured to only operate in the refresh mode when the second set of memory cells operates in the direct access mode and the second set of memory cells is configured to only operate in the refresh mode when the first set of memory cells operates in the direct access mode.

3. The memory circuit of claim 1 , wherein the first set of memory cells and the second set of memory cells are of the same memory type.

4. The memory circuit of claim 3 , wherein the first set of memory cells and the second set of memory cells comprise magnetic random-access memory cells.

5. The memory circuit of claim 4 , wherein the magnetic random-access memory comprises a spin-transfer torque magnetic random-access memory.

6. The memory circuit of claim 1 , wherein the controller is configured to execute the buffered write request in an updating period within a time interval used for the refresh mode.

7. The memory circuit of claim 6 , wherein the updating period is at the end of the time interval used for the refresh mode.

8. The memory circuit of claim 1 , wherein the controller comprises a cache memory configured to store the write requests for the first set of memory cells and for the second set of memory cells.

9. The memory circuit of claim 8 , wherein the cache memory is configured to simultaneously perform read and write operations.

10. The memory circuit of claim 8 , wherein the cache memory comprises Two-Port Register File (TPRF) memory cells.

11. The memory circuit of claim 8 , wherein the cache memory comprises fewer memory cells than the first set of memory cells and the second set of memory cells.

12. The memory circuit of claim 8 , further comprising:

a third set of memory cells configured to operate in a direct access mode and in a refresh mode; and

a fourth set of memory cells configured to operate in the direct access mode or in the refresh mode.

13. The memory circuit of claim 1 , wherein the first set of memory cells comprises a first array of memory cells and the second set of memory cells comprises a separate second array of memory cells.

14. A processor coupled to a memory circuit according to a claim 1 such that the processor is capable to write data to the memory circuit.

15. The processor of claim 14 , wherein the memory circuit is configured as a cache memory of the processor.

16. A modem circuit for a telecommunications device comprising a memory circuit according to claim 1 .

17. A method for operating a first set of memory cells and a second set of memory cells, the method comprising:

operating the first set of memory cells in a direct access mode or in a refresh mode;

operating the second set of memory cells in the direct access mode or in the refresh mode;

receiving a write request;

executing the write request for a set of memory cells being in the direct access mode; and

buffering the write request for later execution for a set of memory cells being in the refresh mode;

wherein the write request for the set of memory cells in the direct access mode is executed at a slower speed than the buffered write request for the set of memory cells in the refresh mode.

18. The method according to claim 17 , wherein the first set of memory cells only operates in the refresh mode when the second set of memory cells operates in the direct access mode and the second set of memory cells only operates in the refresh mode when the first set of memory cells operates in the direct access mode.

19. The method according to claim 17 , further comprising:

executing the buffered write request for the set of memory cells being in the refresh mode in an updating period within a time interval used refresh mode.

Assignments (6)