Semiconductor device and method for manufacturing semiconductor device
A p anode layer is formed on one main surface of an n − drift layer. N + cathode layer having an impurity concentration more than that of the n − drift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the n + cathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the n + cathode layer and p anode layer is formed in the n − drift layer. Resistivity ρ 0 of the n − drift layer satisfies 0.12V 0 ≤ρ 0 ≤0.25V 0 with respect to rated voltage V 0 . Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8×10 11 atoms/cm 2 and equal to or less than 1.0×10 12 atoms/cm 2 .
1. A semiconductor device comprising:
a drift layer of a first-conductivity-type;
an anode layer of a second-conductivity-type that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer;
a cathode layer of the first-conductivity-type that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and
a plurality of broad buffer layers of the first conductivity-type that are provided in the drift layer and each of the plurality of the broad buffer layers has an impurity concentration more than that of a portion of the drift layer excluding the plurality of broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of the anode layer and the cathode layer, the mountain-shaped impurity concentration distribution having a peak at the local maximum value and differences of elevation in a depth direction,
wherein the plurality of broad buffer layers are disposed at different depths from the first main surface, respectively, and the number of broad buffer layers close to the second main surface from an intermediate position of the drift layer is more than the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer, and
wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.12V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
2. A semiconductor device according to claim 1 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.133V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
3. A semiconductor device according to claim 1 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.15V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
4. The semiconductor device according to claim 1 , wherein the drift layer is silicon, the first conductivity type is n-type, the second conductivity type is p-type, and the broad buffer layer includes a hydrogen-related donor.
5. A semiconductor device comprising:
a drift layer of a first conductivity-type;
a base layer of a second conductivity-type that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer;
an emitter layer of the first-conductivity-type that is provided on the first main surface of the drift layer in contact with the base layer and has an impurity concentration more than that of the base layer;
an insulation layer that is provided in contact with the drift layer, the base layer and the emitter layer;
a gate electrode, the insulation layer being disposed between the gate electrode and the drift layer, the base layer, and the emitter layer;
a collector layer of the second conductivity-type that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and
a plurality of broad buffer layers of the first conductivity-type that are provided in the drift layer and each of the plurality of the broad buffer layers has an impurity concentration more than that of a portion of the drift layer excluding the plurality of broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of the base layer and the collector layer, the mountain-shaped impurity concentration distribution having a peak at the local maximum value and differences of elevation in a depth direction,
wherein the plurality of broad buffer layers are disposed at different depths from the first main surface, respectively, and the number of broad buffer layers close to the second main surface from an intermediate position of the drift layer is more than the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer, and
wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.12V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
6. A semiconductor device according to claim 5 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.133V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
7. A semiconductor device according to claim 5 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.15V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
8. A semiconductor device comprising:
a drift layer of a first-conductivity-type;
an anode layer of second-conductivity-type that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer;
a cathode layer of the first-conductivity-type that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and
a plurality of broad buffer layers of the first conductivity-type that are provided in the drift layer and each of the plurality of the broad buffer layers has an impurity concentration more than that of a portion of the drift layer excluding the plurality of broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of the anode layer and the cathode layer, the mountain-shaped impurity concentration distribution having a peak at the local maximum value and differences of elevation in a depth direction,
wherein the plurality of broad buffer layers are disposed at different depths from the first main surface, respectively, and the sum of integrated concentrations of the plurality of broad buffer layers is equal to or more than 4.8×10 11 atoms/cm 2 , and
wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.12V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
9. The semiconductor device according to claim 8 , wherein the sum of the integrated concentrations of the plurality of broad buffer layers that reduce an electric field intensity with respect a critical field intensity is equal to or more than 4.8×10 11 atoms/cm 2 .
10. The semiconductor device according to claim 9 , wherein the reduction in the electric field intensity with respect to a critical electric field intensity is the reduction when a reverse biased voltage with the same level as that of a breakdown voltage is applied.
11. The semiconductor device according to claim 8 , wherein at least one of the broad buffer layers is disposed at the side close to the second main surface from an intermediate position of the drift layer, and at least one of the broad buffer layers is disposed at the side close to the first main surface from the intermediate position of the drift layer.
12. The semiconductor device according to claim 8 , wherein the number of broad buffer layers close to the second main surface from an intermediate position of the drift layer is more than the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer.
13. The semiconductor device according to claim 8 , wherein the number of broad buffer layers is at least three.
14. The semiconductor device according to claim 8 , wherein the sum of the integrated concentrations of the plurality of broad buffer layers is equal to or greater than 5.0×10 11 atoms/cm 2 .
15. The semiconductor device according to claim 8 , wherein the sum of the integrated concentrations of the plurality of broad buffer layers is equal to or greater than 5.2×10 11 atoms/cm 2 .
16. A semiconductor device according to claim 8 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.133V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
17. A semiconductor device according to claim 8 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.15V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
18. A semiconductor device comprising:
a drift layer of a first conductivity-type;
a base layer of a second conductivity-type that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer;
an emitter layer of the first-conductivity-type that is provided on the first main surface of the drift layer in contact with the base layer and has an impurity concentration more than that of the base layer;
an insulation layer that is provided in contact with the drift layer, the base layer and the emitter layer;
a gate electrode, the insulation layer being disposed between the gate electrode and the drift layer, the base layer, and the emitter layer;
a collector layer of the second conductivity-type that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and
a plurality of broad buffer layers of the first conductivity-type that are provided in the drift layer and each of the plurality of the broad buffer layers has an impurity concentration more than that of a portion of the drift layer excluding the plurality of broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of the base layer and the collector layer, the mountain-shaped impurity concentration distribution having a peak at the local maximum value and differences of elevation in a depth direction,
wherein the plurality of broad buffer layers are disposed at different depths from the first main surface, respectively, and the sum of integrated concentrations of the plurality of broad buffer layers is equal to or more than 4.8×10 11 atoms/cm 2 , and
wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.12V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
19. The semiconductor device according to claim 18 , wherein the sum of the integrated concentrations of the plurality of broad buffer layers that reduce an electric field intensity with respect a critical field intensity is equal to or more than 4.8×10 11 atoms/cm 2 .
20. The semiconductor device according to claim 19 , wherein the reduction in the electric field intensity with respect to a critical electric field intensity is the reduction when a reverse biased voltage with the same level as that of a breakdown voltage is applied.
21. The semiconductor device according to claim 18 , wherein at least one of the broad buffer layers is disposed at the side close to the second main surface from an intermediate position of the drift layer, and at least one of the broad buffer layers is disposed at the side close to the first main surface from the intermediate position of the drift layer.
22. The semiconductor device according to claim 18 , wherein the number of broad buffer layers close to the second main surface from an intermediate position of the drift layer is more than the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer.
23. The semiconductor device according to claim 18 , wherein the number of broad buffer layers is at least three.
24. The semiconductor device according to claim 18 , wherein the sum of the integrated concentrations of the plurality of broad buffer layers is equal to or greater than 5.0×10 11 atoms/cm 2 .
25. The semiconductor device according to claim 18 , wherein the sum of the integrated concentrations of the plurality of broad buffer layers is equal to or greater than 5.2×10 11 atoms/cm 2 .
26. A semiconductor device according to claim 18 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.133V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).
27. A semiconductor device according to claim 18 , wherein the resistivity ρ 0 (Ωcm) of the drift layer satisfies 0.15V 0 ≤ρ 0 with respect to a rated voltage V 0 (V).