Hot melt compositions with improved etch resistance
View Patent ↗Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices.
1. A hot melt composition comprising one or more non-aromatic cyclic (alkyl)acrylates in amounts of 30 wt % to 70 wt %, one or more waxes comprising an acid number of 0 to 30 mg KOH/g and one or more radical initiators, the hot melt composition is 100% solids.
2. The hot melt composition of claim 1 , further comprising one or more waxes comprising an acid number of 100 mg KOH/g or greater wherein a weight ratio of the one or more waxes comprising an acid number of 0 to 30 mg KOH/g to the one or more waxes comprising an acid number of 100 mg KOH/g is 1:1 to 5:1.
3. The hot melt composition of claim 2 , wherein the weight ratio is 1:1 to 2:1.
4. The hot melt composition of claim 1 , further comprising one or more non-cyclic (alkyl)acrylates free of acid groups.
5. The hot melt composition of claim 1 , wherein the one or more non-aromatic cyclic (alkyl)acrylates are in amounts 40 wt % to 6 wt %.
6. The hot melt composition of claim 1 , wherein the one or more non-aromatic cyclic (alkyl)acrylates are chosen from tricyclodecane acrylate, isobornyl cyclohexyl acrylate, isobornyl cyclohexyl methacrylate, 3,3,5 trimethylcyclohexyl methacrylate, dicyclopentadienyl methacrylate, tetrahydrofurfuryf acrylate, tetrahydrofurfuryl methacrylate, cyclic trimethylpropane dimethylacrylate, cyclohexane dimethanol dimethacrylate, cyclic trimethylopropane formal acrylate, 2-norbornyl acrylate and tricyclodecane dimethanol diacrylate.
7. The hot melt composition of claim 1 , wherein a net acid number of the hot melt composition is 0-20 mg KOH/g.