IP Library Granted Patent US 9,691,703
Granted Patent B2
US 9,691,703 · App. 14/992,006 · Granted Jun 27, 2017

Bond pad structure with dual passivation layers

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,691,703
App. No.
14/992,006
Granted
Jun 27, 2017
Kind
B2
Abstract

A bond pad structure with dual passivation layers is disclosed. The bond pad structure includes: a pad material layer on a first passivation layer; a protection layer on the top surface of the pad material layer; a second passivation layer covering on the first passivation layer and the protection layer; and an opening formed through the second passivation layer and the protection layer to expose the pad material layer.

Claims (18)

1. A bond pad structure with dual passivation layers, comprising:

a pad material layer on a first passivation layer;

a protection layer on the top surface of the pad material layer, wherein the protection layer comprises a dielectric material;

a second passivation layer covering on the first passivation layer and the protection layer, wherein the second passivation layer comprises a first layer and a second layer and the edges of the first layer and the second layer are aligned with an edge of the protection layer; and

an opening formed through the second passivation layer and the protection layer to expose the pad material layer.

2. The bond pad structure with dual passivation layers according to claim 1 , wherein the pad material layer comprises aluminum or aluminum alloy.

3. The bond pad structure with dual passivation layers according to claim 2 , wherein the aluminum alloy comprises AlCu or AlSiCu.

4. The bond pad structure with dual passivation layers according to claim 1 , further comprising a barrier layer between the first passivation layer and the pad material layer.

5. The bond pad structure with dual passivation layers according to claim 4 , wherein the barrier layer comprises Ti, TiN, Ta, TaN, TiW, WN, or combination thereof.

6. The bond pad structure with dual passivation layers according to claim 4 , wherein an edge of the protection layer is aligned with an edge of the barrier layer.

7. The bond pad structure with dual passivation layers according to claim 1 , wherein an edge of the protection layer is aligned with an edge of the pad material layer.

8. The bond pad structure with dual passivation layers according to claim 1 , wherein an edge of the protection layer is aligned with an edge of the opening.

9. The bond pad structure with dual passivation layers according to claim 1 , wherein the protection layer is selected from the group of dielectric undoped SiC, doped SiC, SiON, oxide or nitride, or inert Ti or TiN.

10. The bond pad structure with dual passivation layers according to claim 1 , wherein the first passivation layer comprises a first SiN layer, a PEOX layer, and a second SiN layer.

11. The bond pad structure with dual passivation layers according to claim 1 , wherein the first passivation layer comprises a SiN layer and a PEOX layer.

12. The bond pad structure with dual passivation layers according to claim 1 , wherein the second passivation layer comprises a FSG layer and a SiN layer.

13. The bond pad structure with dual passivation layers according to claim 12 , wherein an edge of the FSG layer is aligned with an edge of the protection layer.

14. The bond pad structure with dual passivation layers according to claim 12 , wherein an edge of the SiN layer is aligned with an edge of the protection layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2021
From: UNITED MICROELECTRONICS CORPORATION
To: MARLIN SEMICONDUCTOR LIMITED
Reel/Frame 056991/0292 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2016
From: WANG, YE
To: UNITED MICROELECTRONICS CORP.
Reel/Frame 037446/0887 →