Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy
View Patent ↗A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).
1. A spin transfer torque magnetic junction comprising:
an electrically conductive base electrode layer defining a substrate plane;
a magnetic reference layer structure disposed on the base electrode layer and having magnetic anisotropy perpendicular to the substrate plane;
an insulative barrier layer disposed on the magnetic reference layer structure;
a laminated magnetic free layer disposed on the insulative barrier layer and having magnetic anisotropy perpendicular to the substrate plane;
a current polarizing structure disposed on the laminated magnetic free layer and having magnetic anisotropy parallel to the substrate plane; and
an electrically conductive top electrode layer disposed on the current polarizing structure;
wherein the laminated magnetic free layer comprises at least three sublayers of CoFeB, each being separated from an adjacent CoFeB sublayer by one of a plurality of dusting layers.
2. The spin transfer torque magnetic junction of claim 1 wherein the laminated magnetic free layer comprises no more than four sublayers of CoFeB.
3. The spin transfer torque magnetic junction of claim 1 wherein each of the plurality of dusting layers comprises tantalum with a thickness in the range of 1 Angstroms to 7 Angstroms.
4. The spin transfer torque magnetic junction of claim 1 wherein the current polarizing structure comprises a CoPd layer that is adjacent to the top electrode layer, and a MgO spacer layer that is adjacent to the laminated magnetic free layer.
5. The spin transfer torque magnetic junction of claim 1 wherein the magnetic reference layer structure comprises a pinned layer comprising CoFeB that is disposed adjacent the insulative barrier layer, and a pair of antiferromagnetically coupled pinning layers, each having magnetic anisotropy perpendicular to the substrate plane.
6. The spin transfer torque magnetic junction of claim 5 wherein the magnetic reference layer structure further comprises an outer layer comprising an alloy of manganese that is disposed adjacent to the base electrode layer.
7. The spin transfer torque magnetic junction of claim 1 wherein the insulative barrier layer comprises MgO having a thickness in the range of 8 Angstroms to 20 Angstroms.
8. A memory device comprising the spin transfer torque magnetic junction of claim 1 .
9. A spin transfer torque magnetic junction comprising:
an electrically conductive base electrode layer defining a substrate plane;
a current polarizing structure disposed on the base electrode layer and having magnetic anisotropy parallel to the substrate plane;
a laminated magnetic free layer disposed on the current polarizing structure and having magnetic anisotropy perpendicular to the substrate plane;
an insulative barrier layer disposed on the laminated magnetic free layer;
a magnetic reference layer structure disposed on the insulative barrier layer and having magnetic anisotropy perpendicular to the substrate plane; and
an electrically conductive top electrode layer disposed on the magnetic reference layer structure;
wherein the laminated magnetic free layer comprises at least three sublayers of CoFeB, each being separated from an adjacent CoFeB sublayer by one of a plurality of dusting layers.
10. The spin transfer torque magnetic junction of claim 9 wherein each of the plurality of dusting layers comprises tantalum with a thickness in the range of 1 Angstroms to 7 Angstroms.
11. The spin transfer torque magnetic junction of claim 9 wherein the current polarizing structure comprises a CoPd layer that is adjacent to the base electrode layer, a CoFeB polarizing layer, and a MgO spacer layer that is adjacent to the laminated magnetic free layer.
12. The spin transfer torque magnetic junction of claim 9 wherein the magnetic reference layer structure comprises a pinned layer comprising CoFeB that is disposed adjacent the insulative barrier layer, and a pair of antiferromagnetically coupled pinning layers, each having magnetic anisotropy perpendicular to the substrate plane.
13. The spin transfer torque magnetic junction of claim 12 wherein the magnetic reference layer structure further comprises an outer layer comprising an alloy of manganese that is disposed adjacent to the top electrode layer.
14. The spin transfer torque magnetic junction of claim 12 wherein the insulative barrier layer comprises MgO having a thickness in the range of 8 Angstroms to 20 Angstroms.
15. The spin transfer torque magnetic junction of claim 12 wherein the laminated magnetic free layer comprises no more than four sublayers of CoFeB.
16. A memory device comprising the spin transfer torque magnetic junction of claim 9 .
17. A spin transfer torque magnetic junction comprising:
an electrically conductive base electrode layer defining a substrate plane;
a magnetic reference layer structure disposed on the base electrode layer and having magnetic anisotropy perpendicular to the substrate plane;
an insulative barrier layer disposed on the magnetic reference layer;
a laminated magnetic free layer disposed on the insulative barrier layer and having magnetic anisotropy perpendicular to the substrate plane;
a current polarizing structure disposed on the laminated magnetic free layer and having magnetic anisotropy parallel to the substrate plane; and
an electrically conductive top electrode layer disposed on the current polarizing structure;
wherein the laminated magnetic free layer comprises first, second, and third sublayers, each comprising a ferromagnetic material selected from the group consisting of CoFeB, CoPt, FePt, and CoPd; and
wherein the first and second sublayers are separated by a first dusting layer, and the second and third sublayers are separated by a second dusting layer.
18. The spin transfer torque magnetic junction of claim 17 wherein each of the first and second dusting layers comprises tantalum with a thickness in the range of 1 Angstroms to 7 Angstroms.
19. The spin transfer torque magnetic junction of claim 17 wherein the current polarizing structure comprises a CoPd layer that is adjacent to the top electrode layer, a CoFeB polarizing layer, and a MgO spacer layer that is adjacent to the laminated magnetic free layer.
20. The spin transfer torque magnetic junction of claim 17 wherein the magnetic reference layer structure comprises a pinned layer comprising CoFeB that is disposed adjacent the insulative barrier layer, and a pair of antiferromagnetically coupled pinning layers, each having magnetic anisotropy perpendicular to the substrate plane.
21. The spin transfer torque magnetic junction of claim 20 wherein the magnetic reference layer structure further comprises an outer layer comprising an alloy of manganese that is disposed adjacent to the base electrode layer.
22. The spin transfer torque magnetic junction of claim 17 wherein the insulative barrier layer comprises MgO having a thickness in the range of 8 Angstroms to 20 Angstroms.
23. A memory device comprising the spin transfer torque magnetic junction of claim 17 .