Semiconductor laser device, photoelectric converter, and optical information processing unit
A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.
1. A semiconductor light emitting device comprising:
a mesa structure including an active layer;
a first electrode disposed on a top surface of the mesa structure;
an embedding member covering the first electrode and at least a portion of a side surface of the mesa structure, the embedding member having a first connection aperture that reaches the first electrode;
a first wiring disposed on the embedding member, the first wiring (i) having a length equal to or longer than a radius of the mesa section, (ii) overlaying the first connection aperture in its entirety, (iii) extending across opposite sides of the first connection aperture, and (iv) being electrically connected to the first electrode through the first connection aperture;
a second electrode disposed on a bottom surface of the mesa structure; and
a second wiring disposed on the embedding member, and electrically connected to the second electrode through a second connection aperture formed in the embedding member,
wherein,
the embedding member includes a first insulating layer and a second insulating layer,
the mesa structure includes a pillar laminated body covered with the first insulating layer, and
the second insulating layer covers the laminated body.
2. The semiconductor light emitting device according to claim 1 , wherein:
the mesa section is columnar.
3. The semiconductor light emitting device according to claim 1 , wherein, of the first wiring, a region on the laminated body has a substantially point symmetry shape, with respect to a point at a center of the mesa structure, and, of this region, a part extending from the first connection aperture to one side is an excess wiring section.
4. The semiconductor light emitting device according to claim 1 , wherein the second wiring overlays the second connection aperture.
5. The semiconductor light emitting device according to claim 1 , wherein:
the mesa section is disposed above a surface of a transparent substrate, and
a lens corresponding to the active layer is on other surface of the transparent substrate.
6. The semiconductor light emitting device according to claim 5 , wherein:
a base is on the one surface of the transparent substrate, and
the mesa structure is disposed on the base.
7. The semiconductor light emitting device according to claim 1 , wherein:
the mesa structure includes a first multilayer reflective film and a second multilayer reflective film so as to sandwich the active layer; and
the second multilayer reflective film has an oxidation confinement section.
8. The semiconductor light emitting device according to claim 1 , wherein a signal is configured to be input into the first wiring, only from one side of the first connection aperture in an extending direction of the first wiring.
9. A photoelectric converter comprising the semiconductor light emitting device according to claim 1 .
10. An optical information processing device comprising:
the semiconductor light emitting device according to claim 1 , and
a photodetector device configured to receive light signal.