Operating memory devices to apply a programming potential to a memory cell in a string coupled to a source and data line concurrently with biasing the data line to a greater potential than the source
Methods of biasing in memory devices facilitate memory device programming operations. In at least one embodiment, a first string of memory cells comprising a selected memory cell and a second string of memory cells are coupled to a common data line and a common source, where the data line is biased to a potential greater than a potential to which the source is biased during a programming operation performed on the selected memory cell.
1. A method of operating a memory device, the method comprising:
biasing a data line to a first potential, where the data line is coupled to a first end of a first string of memory cells and to a first end of a second string of memory cells;
biasing a source to a second potential, where the source is coupled to a second end of the first string of memory cells and to a second end of the second string of memory cells;
deactivating a select gate coupled between the first end of the second string of memory cells and the data line by biasing a control gate of the select gate to a third potential where the first potential is greater than the third potential; and
performing a programming operation on a selected memory cell of the first string of memory cells by applying a programming potential to a control gate of the selected memory cell concurrently with biasing the data line to the first potential and biasing the source to the second potential and while the select gate is deactivated to increase a threshold voltage of the selected memory cell;
wherein the first potential is greater than the second potential.
2. The method of claim 1 , wherein the first potential comprises a positive potential and the second potential comprises a ground potential.
3. The method of claim 1 , wherein the select gate coupled between the first end of the second string of memory cells and the data line is a first select gate, and further comprising activating a second select gate coupled between the first end of the first string of memory cells and the data line by biasing a control gate of the second select gate to a fourth potential, wherein performing the programming operation on the selected memory cell of the first string of memory cells further comprises performing the programming operation on the selected memory cell of the first string of memory cells by applying the programming potential to the control gate of the selected memory cell while the second select gate is activated.
4. The method of claim 3 , wherein fourth potential is greater than the first potential.
5. The method of claim 1 , further comprising activating a connector gate to couple a first portion of the first string of memory cells to a second portion of the first string of memory cells, wherein performing the programming operation on the selected memory cell of the first string of memory cells further comprises performing the programming operation on the selected memory cell of the first string of memory cells by applying the programming potential to the control gate of the selected memory cell while the connector gate is activated.
6. The method of claim 5 , wherein activating the connector gate comprises applying a fourth potential to a control gate of the connector gate.
7. The method of claim 1 , further comprising biasing unselected memory cells of the first string of memory cells to a fourth potential sufficient to activate the unselected memory cells concurrently with performing the programming operation.
8. The method of claim 7 , wherein the programming potential is greater than the fourth potential.
9. The method of claim 1 , further comprising inducing a channel potential in a channel region in the first string of memory cells substantially equal to the first potential prior to initiating the programming operation.
10. A method of operating a memory device, the method comprising:
biasing a data line to a first potential, where the data line is coupled to a first end of a first string of memory cells and to a first end of a second string of memory cells;
biasing a source to a second potential, where the source is coupled to a second end of the first string of memory cells and to a second end of the second string of memory cells, and where the first potential is greater than the second potential;
deactivating a first select gate coupled between the first end of the second string of memory cells and the data line by biasing a control gate of the first select gate to a third potential, where the first potential is greater than the third potential;
biasing a second select gate and a third select gate to a fourth potential substantially equal to the second potential, where the second select gate is coupled between the second end of the first string of memory cells and the source, and where the third select gate is coupled between the second end of the second string of memory cells and the source; and
performing a programming operation on a selected memory cell of the first string of memory cells by applying a programming potential to a control gate of the selected memory cell concurrently with biasing the data line to the first potential, biasing the source to the second potential, and biasing the second select gate and third select gate to the fourth potential while the first select gate is deactivated to increase a threshold voltage of the selected memory cell.
11. The method of claim 10 , wherein the first potential comprises a positive potential and the second potential comprises a ground potential.
12. The method of claim 10 , further comprising activating a fourth select gate coupled between the first end of the first string of memory cells and the data line by biasing a control gate of the fourth select gate to a fifth potential, wherein performing the programming operation on the selected memory cell of the first string of memory cells further comprises performing the programming operation on the selected memory cell of the first string of memory cells by applying the programming potential to the control gate of the selected memory cell while the fourth select gate is activated.
13. The method of claim 12 , wherein the fifth potential is greater than the first potential.
14. The method of claim 10 , further comprising applying a fifth potential to each memory cell of the first string of memory cells prior to initiating the programming operation sufficient to induce a channel potential in a channel region in the first string of memory cells substantially equal to the first potential.
15. A method of operating a memory device, the method comprising:
biasing a data line to a first potential, where the data line is coupled to a first end of a first string of memory cells and to a first end of a second string of memory cells;
biasing a source to a second potential, where the source is coupled to a second end of the first string of memory cells and to a second end of the second string of memory cells;
deactivating a select gate coupled between the first end of the second string of memory cells and the data line by biasing a control gate of the select gate to a third potential where the first potential is greater than the third potential;
activating unselected memory cells of the first string of memory cells; and
performing a programming operation on a selected memory cell of the first string of memory cells by applying a programming potential to a control gate of the selected memory cell concurrently with activating the unselected memory cells, biasing the data line to the first potential, and biasing the source to the second potential and while the select gate is deactivated to increase a threshold voltage of the selected memory cell;
wherein the first potential is greater than the second potential.
16. The method of claim 15 , further comprising deactivating a third select gate and a fourth select gate concurrently with performing the programming operation, wherein the third select gate is coupled between the second end of the second string of memory cells and the source, and where the fourth select gate is coupled between the second end of the first string of memory cells and the source.
17. The method of claim 16 , wherein deactivating the third select gate and the fourth select gate comprises deactivating the third select gate and the fourth select gate by biasing a control gate of the third select gate and a control gate of the fourth select gate to a potential that is substantially the same as the second potential.
18. The method of claim 15 , further comprising applying a fourth potential to each memory cell of the first string of memory cells prior to initiating the programming operation sufficient to induce a channel potential in a channel region in the first string of memory cells substantially equal to the first potential.
19. The method of claim 15 , wherein the select gate comprises a first select gate and further comprising activating a second select gate concurrently with performing the programming operation, wherein the second select gate is coupled between the first end of the first string of memory cells and the data line.