Semiconductor device and structure

1. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between said plurality of first transistors;

a first wire structure constructed to provide power to a portion of said first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second single crystal transistors, said second layer overlying said at least one metal layer; and

a second wire structure constructed to provide power to a portion of said second transistors,

wherein said second wire structure is isolated from said first wire structure to provide a different power voltage to said portion of said second transistors.

2. An Integrated Circuit device according to claim 1 , further comprising:

at least one conductive structure underneath at least one of said second single crystal transistors, said at least one conductive structure is constructed to provide a back-bias to at least one of said second single crystal transistors.

3. An Integrated Circuit device according to claim 1 , further comprising:

at least one thermal conduction path from at least one of said second single crystal transistors to an external surface of said Integrated Circuit device.

4. An Integrated Circuit device according to claim 1 , further comprising:

a heat-spreader layer disposed between said first layer and said second layer.

5. An Integrated Circuit device according to claim 1 ,

wherein at least a portion of said second wire structure is controlled by at least one of said transistors.

6. An Integrated Circuit device according to claim 1 , further comprising:

a conductive layer disposed underneath said second layer,

wherein said conductive layer provides power to at least one of said second single crystal transistors.

7. An Integrated Circuit device according to claim 1 , further comprising:

a conductive pad overlying at least one of said second single crystal transistors.

8. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer; and

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors.

9. An Integrated Circuit device according to claim 8 ,

wherein at least one of said second transistors comprises a back-bias structure.

10. An Integrated Circuit device according to claim 8 , further comprising:

at least one thermal conduction path from at least one of said second transistors to an external surface of said Integrated Circuit device.

11. An Integrated Circuit device according to claim 8 , further comprising:

a shielding layer,

wherein said shielding layer provides shielding for said at least one metal layer from heat resulting from optical annealing of said second transistors.

12. An Integrated Circuit device according to claim 8 ,

wherein said at least one conductive structure is disposed between said base wafer and said second layer.

13. An Integrated Circuit device according to claim 8 , further comprising:

a conductive pad overlying at least one of said second transistors.

14. An Integrated Circuit device according to claim 8 , further comprising:

at least one thermal conduction path from said at least one conductive structure to an external surface of said Integrated Circuit device.

15. An Integrated Circuit device, comprising:

a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

at least one metal layer providing interconnection between said plurality of first transistors;

a second layer of less than 2 micron thickness, said second layer comprising a plurality of second transistors, said second layer overlying said at least one metal layer,

at least one conductive structure constructed to provide power to a portion of said second transistors,

wherein said provide power is controlled by at least one of said transistors;

a plurality of conductive pads,

wherein at least one of said conductive pads overlays at least one of said second transistors; and

at least one I/O circuit,

wherein said at least one I/O circuit is adapted to interface with external devices through at least one of said plurality of conductive pads.

16. An Integrated Circuit device according to claim 15 ,

wherein at least one of said second transistors comprise a back-bias structure.

17. An Integrated Circuit device according to claim 15 , further comprising:

at least one thermal conduction path from at least one of said second transistors to an external surface of said Integrated Circuit device.

18. An Integrated Circuit device according to claim 15 , further comprising:

a shielding layer,

wherein said shielding layer provides shielding for said at least one metal layer from heat resulting from optical annealing of said second transistors.

19. An Integrated Circuit device according to claim 15 , further comprising:

at least one heat spreader layer underneath said second layer.

20. An Integrated Circuit device according to claim 15 ,

wherein said at least one conductive structure is disposed between said base wafer and said second layer.