Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

(a) supplying a precursor gas to the substrate in a process chamber;

(b) exhausting the precursor gas in the process chamber through an exhaust system;

(c) confining a reaction gas, which differs in chemical structure from the precursor gas, in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is sealed; and

(d) exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened,

wherein, in the act of (c), the reaction gas is allowed to preliminarily flow through the process chamber while the exhaust system is opened, and the reaction gas is then supplied into and confined in the process chamber while the exhaust system is sealed, and

wherein the reaction gas comprises at least one selected from a group consisting of an ammonia gas, a hydrazine gas, a diazene gas, an amine-based gas, and an organic hydrazine-based gas.

2. The method of claim 1 , wherein, in a period in which the exhaust system is sealed in the act of (c), an exhaust flow path opening/closing unit installed in the exhaust system is fully closed.

3. The method of claim 1 , wherein, in the act of (c), the reaction gas is continuously supplied into the process chamber.

4. The method of claim 1 , wherein, in the act of (c), an internal pressure of the process chamber is continuously increased.

5. The method of claim 1 , wherein

the act of (a) includes setting an internal pressure of the process chamber to a first pressure, and

the act of (c) includes setting the internal pressure of the process chamber to a second pressure higher than the first pressure.

6. The method of claim 1 , wherein an opening degree of an exhaust flow path of the exhaust system in the act of (c) is set to be smaller than an opening degree of the exhaust flow path in the act of (a).

7. The method of claim 1 , wherein an opening degree of an exhaust flow path opening/closing unit installed in the exhaust system in the act of (c) is set to be smaller than an opening degree of the exhaust flow path opening/closing unit in the act of (a).

8. The method of claim 1 , wherein the reaction gas comprises at least one selected from a group consisting of a nitrogen-containing gas, a carbon-containing gas, a nitrogen- and carbon-containing gas, a boron-containing gas, and a boron-, nitrogen- and carbon-containing gas.

9. The method of claim 1 , wherein the reaction gas comprises a hydrogen nitride-based gas.

10. The method of claim 1 , wherein the reaction gas is an ammonia gas.

11. The method of claim 1 , wherein the reaction gas is an amine-based gas.

12. The method of claim 1 , wherein the cycle is performed the predetermined number of times under a non-plasma condition.

13. The method of claim 1 , wherein the act of (a) includes setting an opening degree of the exhaust flow path opening/closing unit to a first degree, and

wherein the act of (c) includes setting the opening degree of the exhaust flow path opening/closing unit installed in the exhaust system to a second degree smaller than the first degree during a period when the reaction gas preliminarily flows through the process chamber.

14. The method of claim 1 , wherein the reaction gas is a hydrazine gas.

15. The method of claim 1 , wherein the reaction gas is a diazene gas.