SEMICONDUCTOR DEVICE
There is provided a semiconductor device including a substrate whose surface is made of an insulation material, a semiconductor chip flip-chip connected on the substrate, and a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip, in which the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate and the heat sink has a stress absorbing part. According to the present invention, the protrusion part of the heat sink is prevented from being peeled off from the substrate at the part where the protrusion part of the heat sink is bonded to the substrate.
1 . A semiconductor device comprising:
a substrate whose surface is made of an insulation material;
a semiconductor chip flip-chip connected on the substrate; and
a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip;
wherein the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate, and wherein the heat sink has a stress absorbing part.
2 . The semiconductor device according to claim 1 , wherein the stress absorbing part has lower rigidity than the part excluding the stress absorbing part of the heat sink.
3 . The semiconductor device according to claim 1 , wherein the stress absorbing part is thinned by a groove provided on the surface of the heat sink opposing the substrate.
4 . The semiconductor device according to claim 3 , wherein the number of the grooves provided thereon is two or more.
5 . The semiconductor device according to claim 1 , wherein he protrusion part is arranged to surround the semiconductor chip and the stress absorbing part is arranged inside or outside the protrusion part.
6 . The semiconductor device according to claim 5 , wherein the stress absorbing part is arranged adjacent to the protrusion part.
7 . The semiconductor device according to claim 1 , wherein the stress absorbing part includes a bottomed hole provided in the surface of the heat sink opposing the substrate or a through hole.
8 . The semiconductor device according to claim 1 , wherein the heat sink is made of Cu, Al, or AlSiCu ceramic.
9 . The semiconductor device according to claim 1 , wherein the protrusion part is bonded an electrode arranged on the substrate via the conductive resin, and the electrode is electrivally connected to a ground.