Adjustable losses of bond wire arrangement
The invention provides a bond wire arrangement comprising a signal bond wire ( 1 ) for operably connecting a first electronic device ( 6 ) to a second electronic device ( 8 ), and a control bond wire ( 2 ) being arranged alongside the signal bond wire at a distance so as to have a magnetic coupling with the signal bond wire ( 1 ), and having a first end ( 11 ) coupled to ground, and a second end ( 12 ) coupled to ground via a resistive element ( 14 ). The proposed solution allows the control of the Q factor (losses) of wire bond inductors during assembly phase, which will save time and reduce overall design cycle as compared to known methods.
1. A bond wire arrangement comprising:
a signal bond wire for operably connecting a first device to a second device; and
a first control bond wire being arranged alongside said signal bond wire at a distance so as to have a magnetic coupling with said signal bond wire, and having a first end coupled to ground, and a second end coupled to ground via a resistive element, wherein the first control bond wire and the signal bond wire have different shapes, the different shapes selected to result in a coupling factor between the signal bond wire and the control bond wire that reduces a quality factor (Qeq).
2. A bond wire arrangement according to claim 1 , said resistive element having a resistance between 0.2 Ohm and 5 Ohm.
3. A bond wire arrangement according to claim 1 , wherein the resistive element comprises a resistor.
4. A bond wire arrangement according to claim 1 , wherein the first control bond wire is coupled to a metal bonding pad at the second end, and wherein the resistive element comprises a semiconductor layer formed under the metal bonding pad.
5. A bond wire arrangement according to claim 1 , wherein a coupling factor between said signal bond wire and said first control bond wire is between 0.1-0.7.
6. A bond wire arrangement according to claim 1 , wherein the distance between said signal bond wire and said first control bond wire is less than 200 microns.
7. A bond wire arrangement according to claim 1 , wherein said bond wire arrangement comprises a capacitor arranged in series with said resistive element.
8. A bond wire arrangement according to claim 1 , wherein a second control bond wire is arranged alongside said signal bond wire at a second distance so as to have a magnetic coupling with said signal bond wire, said second control bond wire being arranged at a side of the signal bond wire opposite from a side where said first control bond wire is arranged.
9. A bond wire arrangement according to claim 1 , wherein the different shapes comprise the signal bond wire and the first control bond wire having different heights.
10. A power amplifier circuit comprising:
a radio frequency (RF) match network that includes a bypass network with a bond wire arrangement, wherein the bond wire arrangement includes
a signal bond wire for operably connecting a first device to a second electronic device, and
a control bond wire being arranged alongside said signal bond wire at a distance so as to have a magnetic coupling with said signal bond wire, and having a first end coupled to ground, and a second end coupled to ground via a resistive element, wherein the signal bond wire has a first end physically connected to a first signal bonding pad and has a second end physically connected to a second signal bonding pad, and wherein the control bond wire first end is physically connected to a first control bonding pad and wherein the control bond wire second end is physically connected to a second control bonding pad, and wherein the resistive element comprises a semiconductor layer formed under the second control bonding pad.
11. A power amplifier circuit according to claim 10 , wherein the bypass network further comprises a bypass inductor arranged in series with a decoupling capacitor, said bypass inductor being embodied by the signal bond wire of the bond wire arrangement.
12. A power amplifier circuit according to claim 10 , wherein the RF match network comprises a shunt inductor and a DC blocking capacitor arranged in series with said shunt inductor so as to connect an output lead of the power amplifier circuit and ground.
13. A power amplifier circuit according to claim 10 wherein the first control bond wire and the signal bond wire have different shapes, the different shapes selected to result in a coupling factor of 0.1 to 0.7 between the signal bond wire and the control bond wire.
14. A RF circuit comprising:
a wire bond arrangement that includes
a signal bond wire for operably connecting a first device to a second device, the signal bond wire having a first end physically connected to a first signal bonding pad and having a second end physically connected to a second signal bonding pad, and
a control bond wire being arranged alongside said signal bond wire at a distance so as to have a magnetic coupling with said signal bond wire, and having a first end physically connected to a first control bonding pad that is coupled to ground, and a second end and physically connected to a second control bonding pad that is coupled to ground via a resistive element, wherein the control bond wire and the signal bond wire have different shapes, the different shapes selected to result in a coupling factor of 0.1 to 0.7 between the signal bond wire and the control bond wire, the coupling factor selected to reduce a quality factor (Qeq).
15. A RF circuit according to claim 14 , wherein said wire bond arrangement is arranged in a final stage of said RF circuit.