Method and apparatus for controlling an IGBT device

1. A control module for controlling at least one insulated gate bipolar transistor, IGBT, device; the control module comprising at least one output arranged to be operably coupled to at least one IGBT driver module for the at least one IGBT device;

the control module is arranged to receive a first IGBT control signal indicating a required operating state of the at least one IGBT device and at least one further IGBT control signal;

wherein the control module is further arranged to, upon the first IGBT control signal indicating a required change in operating state of the at least one IGBT device:

control the at least one IGBT driver module to change an operating state of the at least one IGBT device by applying a first logical state modulation at the output thereof; and

apply at least one further modulation to the logical state at the output thereof in accordance with the at least one further IGBT control signal within a time period from the first logical state transition, the time period being less than a state change reaction period Δt for the at least one IGBT device.

2. The control module of claim 1 , wherein the first logical state modulation comprises a logical state transition at the output of the control module.

3. The control module of claim 1 , wherein applying the at least one further modulation to the logical state at the output of the control module comprises:

causing at least one logical state transition at the output of the control module within the time period from the first logical state modulation, in accordance with a first condition of the at least one further IGBT control signal; and

causing no further logical state transitions at the output of the control module within the time period from the first logical state modulation, in accordance with a second condition of the at least one further IGBT control signal.

4. The control module of claim 3 , wherein applying the at least one further modulation to the logical state at the output of the control module further comprises, in accordance with the first condition of the at least one further IGBT control signal, causing at least one still further logical state transition at the output thereof such that the logical state of the output of the control module is returned to the logical state following the first logical state modulation.

5. The control module of claim 1 , wherein the at least one further IGBT control signal comprises an IGBT operating state change slew rate control signal.

6. A method of controlling an insulated gate bipolar transistor, IGBT, device, the method comprising receiving a first IGBT control signal indicating a required operating state of the IGBT device and receiving at least one further IGBT control signal; wherein the method further comprises, upon the first IGBT control signal indicating a required change in operating state of the IGBT device:

controlling an IGBT driver module for the IGBT device to change an operating state of the IGBT device by applying a first logical state modulation at an input of an IGBT coupling channel; and

applying at least one further modulation to the logical state at the input of the IGBT coupling channel in accordance with the at least one further IGBT control signal within a time period from the first logical state modulation, the time period being less than a state change reaction period Δt for the at least one IGBT device.

7. An insulated gate bipolar transistor, IGBT, driver module comprising at least one decoder; the at least one decoder comprising an input arranged to be operably coupled to an output of at least one IGBT control module and arranged to:

detect a first logical state modulation at the input thereof, and output a first IGBT control signal indicating a required change of operating state of at least one IGBT device upon detection of a first logical state modulation at the input thereof; and

detect at least one further modulation of the logical state at the input thereof within a time period from the first logical state modulation, the time period being less than a state change reaction period Δt for the at least one IGBT device, and output at least one further IGBT control signal in accordance with the detected at least one further modulation of the logical state at the input thereof.

8. The IGBT driver module of claim 7 , wherein the at least one decoder is arranged to detect logical state modulations at the input thereof comprising logical state pulses.

9. The IGBT driver module of claim wherein the at least one decoder is arranged to detect at least one further modulation of the logical state at the input thereof comprising:

at least one pulse at the input thereof within the time period from the first logical state modulation, in accordance with a first condition of the at least one further IGBT control signal; and

no further logical state modulations at the input thereof within the time period from the first logical state transition, in accordance with a second condition of the at least one further IGBT control signal.

10. The IGBT driver module of claim 7 , wherein the at least one decoder comprises a first decoding component comprising an input arranged to be operably coupled to an output of at least one IGBT control module, the first decoding component being arranged to detect a first logical state modulation at the input thereof, and output a first IGBT control signal indicating a required change of operating state of at least one IGBT device upon detection of a first logical state modulation at the input thereof.

11. The IGBT driver module of claim 10 , wherein the first decoding component comprises an RS latch device comprising a set input arranged to be operably coupled to an output of at least one IGBT control module.

12. The IGBT driver module of claim 11 , wherein the RS latch device further comprises a reset input operably coupled to an output of the RS latch device via a delay circuit.

13. The IGBT driver module of claim 7 , wherein the decoder comprises at least one further decoding component comprising an input arranged to be operably coupled to an output of at least one IGBT control module, the at least one further decoding component being arranged to detect at least one further modulation of the logical state at the input thereof within a time period from the first logical state modulation, the time period being less than a state change reaction period Δt for the at least one IGBT device, and output at least one further IGBT control signal in accordance with the detected at least one further modulation of the logical state at the input thereof.

14. The IGBT driver module of claim 13 , wherein the at least one further decoding component comprises a divide-by-two circuit comprising at least one flip-flop device arranged to be clocked upon each second pulse of a logical state at the input of the at least one further decoding component; wherein a data input of the at least one flip-flop device is operably coupled to the output of the first decoding component, and the at least one flip-flop device is arranged to output, as at least one further IGBT control signal, the signal received at its data input upon being clocked.

15. An IGBT driver module of claim 7 , wherein the IGBT driver module further comprises at least one driver component arranged to receive the first and at least one further IGBT control signals output by the at least one decoder, and to control at least one IGBT device in accordance with the received first and at least one further IGBT control signals.

16. The IGBT driver module of to claim 15 , wherein the at least one driver component is arranged to control a change of operating state of the IGBT device in accordance with the first IGBT control signal.

17. The IGBT driver module of to claim 15 , wherein the driver component is arranged to control a slew rate with which an operating state of the IGBT device is to be changed in accordance with the at least one further IGBT control signal.

18. A method of controlling an insulated gate bipolar transistor, IGBT, device, the method comprising, within an IGBT driver module:

detecting a first logical state modulation at an input of the IGBT driver module;

deriving a first IGBT control signal indicating a required change of operating state of at least one IGBT device upon detection of a first logical state modulation at the input thereof;

detecting at least one further modulation of the logical state at the input of the IGBT driver module within a time period from the first logical state modulation, the time period being less than a state change reaction period Δt for the at least one IGBT device; and

deriving at least one further IGBT control signal in accordance with the detected at least one further modulation of the logical state at the input thereof.

19. An insulated gate bipolar transistor, IGBT, control apparatus comprising at least one IGBT driver module according to claim 7 .