Integrated circuit having improved electromigration performance and method of forming same

1. A method of forming an interconnect for use in an integrated circuit, the method comprising:

forming an opening in a dielectric layer on a substrate;

filling the opening with a metal such that an overburden outside of the opening is created;

subjecting the metal to a microwave energy dose such that atoms from the overburden migrate to within the opening; and

planarizing the metal to a top surface of the opening to remove the overburden, thereby forming the interconnect.

2. The method of claim 1 , wherein the subjecting of the metal to the microwave energy dose includes subjecting the metal to the microwave energy dose for approximately 0.5 hours to approximately 10 hours.

3. The method of claim 1 , wherein the subjecting of the metal to the microwave energy dose recrystallizes the metal to form metal grains having a width of at approximately three times a width of opening to approximately ten times the width of the opening when measured along the direction of current flow.

4. The method of claim 1 , further comprising:

performing a laser anneal after the filling of the opening with the metal and before the subjecting of the metal to the microwave dose.

5. The method of claim 1 , wherein the subjecting the metal to the microwave energy dose recrystallizes the metal such that an average grain length of the metal is approximately 30 nanometers or more.

6. The method of claim 1 , wherein the overburden includes a thickness of approximately one-half to approximately three times a skin depth of microwave radiation in the metal.

7. The method of claim 1 , wherein the metal includes at least one of: copper, silver, cobalt and gold.

8. The method of claim 1 , further comprising:

forming a liner layer to substantially coat the opening after the forming of the opening; and

forming a seed layer to substantially coat the liner layer within the opening prior to the filling of the opening with the metal.

9. The method of claim 8 , wherein the liner layer includes at least one of: tantalum, tantalum nitride, tantalum-aluminum nitride, tantalum silicide, titanium, titanium nitride, titanium-silicon nitride, tungsten, manganese, cobalt, and ruthenium, and

wherein the seed layer includes a copper seed layer.

10. A method of forming an interconnect for use in an integrated circuit, the method comprising:

forming an opening in a dielectric layer on a substrate;

forming a liner layer to substantially coat the opening;

forming a seed layer to substantially coat the liner layer within the opening;

filling the opening with a metal such that an overburden outside of the opening is created;

subjecting the metal to a microwave energy dose such that atoms from the overburden migrate to within the opening;

planarizing the metal to a top surface of the opening to remove the overburden; and

forming a dielectric cap layer over the metal, thereby forming the interconnect.

11. The method of claim 10 , wherein the subjecting of the metal to the microwave energy dose includes subjecting the metal to the microwave energy dose for approximately 0.5 hours to approximately 10 hours.

12. The method of claim 10 , wherein the subjecting of the metal to the microwave energy dose recrystallizes the metal to form grains having an average grain length of approximately 30 nanometers (nm) or more.

13. The method of claim 10 , wherein further comprising:

performing a laser anneal after the filling of the opening with the metal and before the subjecting of the metal to the microwave dose.

14. The method of claim 10 , wherein the subjecting the metal to the microwave energy dose recrystallizes the metal such that an average grain length of the metal is approximately 30 nanometers or more.

15. The method of claim 10 , wherein the metal includes at least one of: copper, silver, cobalt, and gold.