Correction die for wafer/die stack

1. A microelectronic assembly, comprising: a plurality of semiconductor dies coupled in a plurality of vertical three dimensional (3D) die stacks via a direct bond interconnect technique that includes direct insulator-to-insulator bonding at room-temperature, such that a footprint of each die stack is equivalent to a footprint of a single die of the die stack, a quantity of the dies of each die stack preselected to include at least one additional die more than required for a predetermined capacity of the die stack, at least one of the dies in at least one of the die stacks of the plurality of die stacks being a non-operating die, a die configured for non-use, or a die used only to electrically couple together two other dies in the die stack, and at least one die of each die stack having a non-operating die comprises a correction die, wherein the correction die comprises a functionally duplicate or functionally equivalent die to the non-operating die and operates as a functional equivalent replacement for the non-operating die in the stack, and wherein the correction die has a footprint that is smaller than a footprint of the non-operating die, wherein a die stack without a non-operating die does not include a correction die, and wherein each die of the die stack includes an interconnectivity layer comprising one or more electrical connections within a perimeter of the die, each die of the die stack electrically coupled to an adjacent die of the die stack using the one or more electrical connections and one or more mated electrical connections within a perimeter of a facing surface of the adjacent die.

2. The microelectronic assembly of claim 1 , wherein the quantity of dies of the die stack comprises an odd-numbered quantity and an even number of dies are utilized for data memory function.

3. The microelectronic assembly of claim 1 , wherein the at least one die configured for non-use comprises a dummy die.

4. The microelectronic assembly of claim 3 , wherein the dummy die is disposed as the top-most die in the die stack.

5. The microelectronic assembly of claim 1 , wherein when the non-operating die is disposed between dies of the die stack or is disposed as the bottom-most die of the die stack, the non-operating die comprising an inoperative die.

6. The microelectronic assembly of claim 1 , wherein the non-operating die comprises a known operational die, a known non-operational die, a known defective die, or a portion of a reconstituted wafer.

7. The microelectronic assembly of claim 1 , wherein the correction die performs the entire electronic function of the non-operating die.

8. A microelectronic arrangement, comprising: a plurality of semiconductor wafers coupled in a wafer-to-wafer stack via a direct bond interconnect technique that includes direct insulator-to-insulator bonding at room-temperature, each wafer including a plurality of dies, the wafers aligned such that the plurality of dies of each wafer couple to form a plurality of die stacks, each die stack aligned along an axis generally transverse to a plane of at least one of the wafers, wherein one or more of the plurality of die stacks of the plurality of wafers includes a non-operating die; one or more correction dies coupled to a die of each of the one or more die stacks that includes the non-operating die to form one or more modified stacks, the one or more correction dies are not coupled to the die stack without the non-operating die, wherein the correction die comprises a functionally duplicate or functionally equivalent die to the non-operating die and operates as a functional equivalent replacement for the non-operating die in the die stack.

9. The microelectronic arrangement of claim 8 , wherein the quantity of wafers of the wafer-to-wafer stack comprises an even quantity, and wherein each modified stack of the wafer-to-wafer stack includes the even quantity of operating dies plus the non-operating die.

10. The microelectronic arrangement of claim 8 , wherein the correction die is arranged to electrically substitute for a defective die of the one or more of the plurality of die stacks.

11. The microelectronic arrangement of claim 8 , wherein at least one of the plurality of die stacks includes a dummy die coupled to a die of the at least one of the die stacks, the dummy die adjusting an overall height of a respective modified stack.

12. The microelectronic arrangement of claim 11 , wherein the dummy die comprises an operational die, a non-operational die, filler material, or a portion of a reconstituted wafer.

13. The microelectronic arrangement of claim 8 , wherein the plurality of die stacks, including the one or more correction dies, are singulated from the wafer-to-wafer stack.

14. The microelectronic arrangement of claim 8 , further comprising one or more correction wafers coupled to a wafer of the wafer-to-wafer stack via the direct bond interconnect technique, the one or more correction wafers including the one or more correction dies, the one or more correction wafers are aligned to the wafer of the wafer-to-wafer stack such that the one or more correction dies are coupled to dies of the one or more die stacks that include a non-operating die and are not coupled to dies of a die stack that does not include a non-operating die.