Pattern trimming compositions and methods
View Patent ↗Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.
1. A photoresist pattern trimming composition, comprising:
a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and
a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 70 to 98 wt % based on the solvent system, and one or more alcohol and/or ester solvents in a combined amount of from 2 to 30 wt % based on the solvent system.
2. The photoresist pattern trimming composition of claim 1 , wherein the solvent system comprises a C4-C8 monohydric alcohol and/or an alkyl ester having a total carbon number of from 4 to 10.
3. The photoresist pattern trimming composition of claim 1 , wherein the one or more monoether solvents comprise an alkyl monoether and/or an aromatic monoether having a total carbon number of from 6 to 16.
4. The photoresist pattern trimming composition of claim 1 , wherein the solvent system comprises: diisoamyl ether or anisole; and 4-methyl-2-pentanol.
5. The photoresist pattern trimming composition of claim 1 , wherein the polymer comprises a repeat unit comprising a —C(CF3) 2 OH group and/or a repeat unit formed from a (meth)acrylic acid monomer.
6. The photoresist pattern trimming composition of claim 1 , further comprising a non-polymeric acid or an acid generator.
7. A photoresist pattern trimming composition of claim 1 ,
wherein the composition is free of non-polymeric acids and acid generators.
8. The photoresist pattern trimming composition of claim 1 , wherein the polymer comprises a repeat unit formed from a vinyl aromatic monomer.
9. The photoresist pattern trimming composition of claim 1 , wherein the polymer comprises a repeat unit formed from an optionally substituted alkyl (meth)acrylate monomer.
10. The photoresist pattern trimming composition of claim 1 , wherein the solvent system comprises one or more alcohol solvents.
11. The photoresist pattern trimming composition of claim 1 , wherein the solvent system comprises one or more ester solvents.