Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.
1. A substrate processing method, comprising:
forming a film on a substrate supported by a substrate support in a process chamber by supplying a precursor and a reactant to the substrate under a temperature at which the precursor and the reactant are is not pyrolyzed;
unloading the substrate and the substrate support from the process chamber after performing the act of forming the film;
sealing the process chamber by an opening cover in a state in which the substrate support does not exist within the process chamber after performing the act of unloading the substrate; and
purging, after performing the act of sealing the process chamber, an interior of the process chamber by supplying a plasma-excited oxygen-containing gas into the process chamber.
2. The method of claim 1 , wherein the temperature in the act of forming the film is set at a temperature of 0 degrees C. or more and 150 degrees C. or less.
3. The method of claim 1 , wherein in the act of purging the interior of the process chamber, an internal pressure of the process chamber is changed.
4. The method of claim 1 , wherein in the act of forming the film, a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing: supplying the precursor; and supplying the plasma-excited oxygen-containing gas.
5. The method of claim 1 , wherein the precursor contains an amino group.
6. The method of claim 1 , wherein the precursor contains a halogen group.
7. The method of claim 1 , wherein a time period for supplying the plasma-excited oxygen-containing gas is two minutes or more and fifteen minutes or less.
8. The method of claim 7 , wherein the time period for supplying the plasma-excited oxygen-containing gas is three minutes or more and twelve minutes or less.
9. The method of claim 8 , wherein the time period for supplying the plasma-excited oxygen-containing gas is five minutes or more and ten minutes or less.
10. A substrate processing method, comprising:
forming a film containing oxygen and a predetermined element on a substrate supported by a substrate support in a process chamber by performing:
supplying a precursor containing the predetermined element to the substrate, under a temperature, the precursor not being pyrolyzed at the temperature; and
supplying a reactant including a plasma-excited oxygen-containing gas;
unloading the substrate and the substrate support from the process chamber after performing the act of forming the film;
sealing the process chamber by an opening cover in a state in which the substrate support does not exist within the process chamber after performing the act of unloading the substrate, and
purging, after performing the act of sealing the process chamber, an interior of the process chamber supplying a purge gas including the plasma-excited oxygen-containing gas into the process chamber.
11. The method of claim 10 , wherein a time period of purging the interior of the process chamber is set longer than a time period of supplying the reactant to the substrate.
12. The method of claim 10 , wherein the reactant supplied when forming the film is the same as the purge gas supplied when purging the interior of the process chamber.
13. The method of claim 10 , wherein a time period for supplying the plasma-excited oxygen-containing gas is two minutes or more and fifteen minutes or less.
14. The method of claim 13 , wherein the time period for supplying the plasma-excited oxygen-containing gas is three minutes or more and twelve minutes or less.
15. The method of claim 14 , wherein the time period for supplying the plasma-excited oxygen-containing gas is five minutes or more and ten minutes or less.
16. A method of manufacturing a semiconductor device:
forming a film on a substrate supported by a substrate support in a process chamber by supplying a precursor and a reactant to the substrate under a temperature at which the precursor is not pyrolyzed;
unloading the substrate and the substrate support from the process chamber after performing the act of forming the film;
sealing the process chamber by an opening cover in a state in which the substrate support does not exist within the process chamber after performing the act of unloading the substrate; and
purging, after performing the act of sealing the process chamber, an interior of the process chamber by supplying a plasma-excited oxygen-containing gas into the process chamber.
17. The method of claim 16 , wherein a time period for supplying the plasma-excited oxygen-containing gas is two minutes or more and fifteen minutes or less.
18. The method of claim 17 , wherein the time period for supplying the plasma-excited oxygen-containing gas is three minutes or more and twelve minutes or less.
19. The method of claim 18 , wherein the time period for supplying the plasma-excited oxygen-containing gas is five minutes or more and ten minutes or less.