Inverted optical device
Inverted optical device. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback substrates are dissimilar in composition to the carrier wafer. The plurality of piggyback substrates are processed, while attached to the carrier wafer, to produce a plurality of integrated circuit devices. A flip wafer is attached to the plurality of light emitting diodes, away from the carrier wafer and the carrier wafer is removed. The plurality of light emitting diodes may be singulated to form individual light emitting diode devices.
1. An apparatus comprising:
a non-conducting substrate structure comprising glass, fused silica, plastic-based materials, glass-reinforced epoxy, metal-core printed circuit board materials, ceramics, or organic materials;
a light emitting diode semiconductor structure having a pair of semiconductor contact layer surfaces,
wherein a substrate upon which said light emitting diode semiconductor structure was fabricated is absent,
wherein said pair of semiconductor contact layer surfaces face said substrate structure and are in electrical contact with package contacts on the opposite side of the substrate structure,
wherein one semiconductor contact layer surface is in direct contact with a first single conductive via which electrically connects the semiconductor contact layer surface through the substrate structure to a first package contact, and the other semiconductor contact layer surface is in direct contact with a second single conductive via which electrically connects the other semiconductor contact layer surface through the substrate structure to a second package contact; and
an insulating material coupling said light emitting diode semiconductor structure to said substrate structure.
2. The apparatus of claim 1 , wherein the substrate structure comprises a reflective surface on a non-light transmissive said of substrate structure.
3. The apparatus of claim 2 further comprising: a base for coupling to an alternating current supply; and
electronics configured to convert said alternating current to electrical power suitable for driving said light emitting diode.
4. The apparatus of claim 2 further comprising: a processor for operating a graphical user interface; a display for displaying said graphical user interface; and
wherein said light emitting diode is configured to illuminate said display.
5. The apparatus of claim 1 , wherein the contact layer surfaces are in contact with a light emitting diode structure includes a surface that is roughened through which light is emitted.
6. The apparatus of claim 5 wherein the roughened surface is adjacent to an optical layer.
7. The apparatus of claim 1 wherein said substrate structure comprises a non-crystalline interface with said light emitting diode semiconductor structure.
8. The apparatus of claim 1 , wherein said substrate structure is not the fabrication substrate of the light emitting diode structure.
9. The apparatus of claim 1 wherein a last sequentially fabricated layer of said light emitting diode semiconductor structure is closest to said substrate structure.
10. The apparatus of claim 1 further comprising a plurality of optical layers adjacent to and coupled to said light emitting diode semiconductor structure, opposite of said substrate structure.
11. The apparatus of claim 10 wherein one of said plurality of optical layers having the highest refractive index is placed closest to said light emitting diode semiconductor structure.
12. The apparatus of claim 10 wherein one of said plurality of optical layers having the highest refractive index is placed closest to said light emitting diode semiconductor structure.
13. The apparatus of claim 10 wherein a doped conductive layer of said light emitting diode semiconductor structure is in contact with one of said plurality of optical layers.
14. The apparatus of claim 1 further comprising conductive structures electrically coupling and directly contacting said pair of contact layer surfaces to the package contacts on said substrate structure.
15. The apparatus of claim 14 wherein said package contacts are on a surface of said substrate structure away from said light emitting diode semiconductor structure.
16. The apparatus of claim 1 wherein said substrate structure comprises a conductive pathway for electrically coupling at least one of said pair of contact layer surfaces to its respective package contact on said substrate structure.
17. The apparatus of claim 1 further comprising a fabrication substrate comprising a crystalline interface to said light emitting diode semiconductor structure.
18. The apparatus of claim 17 wherein said insulating material is disposed between said substrate structure and said fabrication substrate.