Asymmetric high-K dielectric for reducing gate induced drain leakage
View Patent ↗An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.
1. A method comprising:
forming a gate first structure on a substrate on a gate dielectric material;
forming spacers on the gate first structure;
performing an angled implant on a drain side of the gate first structure after spacer formation;
forming a mask only on a source side of the gate first structure prior to the angled implant and after spacer formation; and
performing a regrowth process on a drain side of the gate first structure to thicken the gate dielectric material on the drain side of the gate first structure.
2. The method of claim 1 , wherein the gate first structure is a finFET technology.
3. The method of claim 1 , wherein the gate dielectric material is a high-k dielectric material.
4. The method of claim 3 , wherein the high-k dielectric material is HfO 2 .
5. The method of claim 1 , wherein the spacers are Si 3 N 4 material.
6. The method of claim 1 , wherein the angled implant is an angled oxygen implant process.
7. The method of claim 1 , wherein the angled implant is of a damaging species.
8. The method of claim 7 , wherein the damaging species is one of Germanium, Xenon and Argon on the drain side of the gate first structure.
9. The method of claim 7 , wherein the damaging species is an etchant used with reactive ion etching processes on the drain side.
10. The method of claim 1 , wherein the angled implant on the device side of the gate first structure damages spacer material on the drain side of the gate first structure.
11. The method of claim 1 , further comprising removing the mask after the performing of the angled implant.
12. The method of claim 11 , wherein the removing of the mask is a dry process using N 2 H 2 .
13. The method of claim 11 , wherein the removing of the mask is a wet process.
14. The method of claim 1 , wherein the regrowth process is a temperature annealing process, wherein a sidewall on the source side will prevent or inhibit O 2 ingress on the source side during the anneal process.