Asymmetric high-k dielectric for reducing gate induced drain leakage
View Patent ↗An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.
1. A method comprising:
performing a damaging process on a high-k dielectric sidewall of a gate structure;
performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region; and
removing the damaged high-k dielectric sidewall to expose underlying sidewalls on the source side, wherein the removing of the damaged high-k dielectric sidewall does not remove a sidewall on the gate structure on the drain side.
2. The method of claim 1 , wherein the sidewall is a high-k dielectric layer.
3. The method of claim 1 , wherein the damaging process is an implantation process.
4. The method of claim 3 , wherein the implantation process is an oxygen implant.
5. The method of claim 1 , wherein the damaging process is an implantation of a damaging species.
6. The method of claim 5 , wherein the damaging species includes one of Germanium, Xenon, and Argon.
7. The method of claim 1 , wherein the removing is a gentle etch removal process.
8. The method of claim 7 , wherein the gentle etch process is a dilute HF process, selective to the damaged sidewall.
9. The method of claim 1 , further comprises forming the gate structure within an opening between the sidewalls of the drain side and the source side.
10. The method of claim 9 , wherein the forming the gate structure is a deposition of metal materials.
11. The method of claim 10 , wherein the metal materials are of different work functions.
12. The method of claim 11 , wherein the oxygen annealing process is a low temperature O 2 anneal to regrow oxygen on the drain side of gate structure.