Method of manufacturing semiconductor device for forming film including at least two different elements
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate under a condition that an adsorption of the first element included in the first gas is not saturated; and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.
2. The method of claim 1 , wherein the condition in (a) includes a condition that the first gas is not decomposed by itself.
3. The method of claim 1 , wherein the first layer includes a discontinuous layer.
4. The method of claim 1 , wherein the condition in (a) includes a condition that the first gas is decomposed by itself.
5. The method of claim 1 , wherein the first layer includes a layer in which at least one of a discontinuous layer or a continuous layer is overlapped.
6. The method of claim 1 , wherein a composition ratio of the film is controlled by the condition in (a).
7. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, and a third element different from the first and the second elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate under a condition that an adsorption of the first element included in the first gas is not saturated;
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to form a layer that includes the second element on the first layer or to modify the first layer; and
(c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate to modify the second layer under a condition that a modifying reaction of the second layer by the third gas is not saturated.
8. The method of claim 7 , wherein the condition in (a) includes a condition that the first gas is not decomposed by itself.
9. The method of claim 7 , wherein the first layer includes a discontinuous layer.
10. The method of claim 7 , wherein the condition in (a) includes a condition that the first gas is decomposed by itself.
11. The method of claim 7 , wherein the first layer includes a layer in which at least one of a discontinuous layer or a continuous layer is overlapped.
12. The method of claim 7 , wherein a composition ratio of the film is controlled by the condition in (a).
13. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first and the third elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate under a condition that an adsorption of the first element included in the first gas is not saturated;
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to form a layer that includes the second element on the first layer or to modify the first layer;
(c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate to form a layer that includes the third element on the second layer or to modify the second layer; and
(d) forming a fourth layer that includes the first element, the second element, the third element, and the fourth element by supplying a fourth gas that includes the fourth element to the substrate to modify the third layer under a condition that a modifying reaction of the third layer by the fourth gas is not saturated.
14. The method of claim 13 , wherein the condition in (a) includes a condition that the first gas is not decomposed by itself.
15. The method of claim 13 , wherein the first layer includes a discontinuous layer.
16. The method of claim 13 , wherein the condition in (a) includes a condition that the first gas is decomposed by itself.
17. The method of claim 13 , wherein the first layer includes a layer in which at least one of a discontinuous layer or a continuous layer is overlapped.
18. The method of claim 13 , wherein a composition ratio of the film is controlled by the condition in (a).