Integrated power device
A semiconductor device that includes a plurality of isolated half-bridges formed in a common semiconductor die.
1. A single semiconductor die having formed therein an integrated power device comprising:
a power stage including a plurality of parallel-connected half-bridges each including a high side III-nitride power semiconductor device and a low side III-nitride power semiconductor device disposed in a common III-nitride heterostructure;
said high side III-nitride power semiconductor device and said low side III-nitride power semiconductor device, each including source fingers, drain fingers, and gate fingers;
said source fingers of said high side III-nitride power semiconductor device and said drain fingers of said low side III-nitride power semiconductor device being coupled to one another;
wherein said common III-nitride heterostructure includes a two dimensional electron gas (2-DEG) which forms a conductive channel between said source fingers and said drain fingers of each high side III-nitride power semiconductor device, and a conductive channel between said source fingers and said drain fingers of each low side III-nitride power semiconductor device;
wherein said two dimensional electron gas is interrupted in said common III-nitride heterostructure between said high side and said low Ill-nitride power semiconductor devices, so as to electrically isolate said conductive channel of said high side III-nitride power semiconductor devices from said conductive channel of said low side III-nitride power semiconductor devices.
2. The single semiconductor die of claim 1 , wherein said common III-nitride heterostructure includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate said two-dimensional electron gas.
3. The single semiconductor die of claim 2 , wherein said one III-nitride body comprises AlGaN.
4. The single semiconductor die of claim 2 , wherein said another III-nitride body comprises GaN.
5. The single semiconductor die of claim 1 , wherein said source fingers and said drain fingers are alternately arranged in an interdigitated pattern.
6. A single semiconductor die having formed therein an integrated power device comprising:
a first III-nitride power semiconductor device and a second III-nitride power semiconductor device disposed in a common III-nitride heterostructure, each including source fingers, drain fingers, and gate fingers;
said source fingers of said first III-nitride power semiconductor device and said drain fingers of said second III-nitride power semiconductor device being coupled to one another;
a first output of a first half-bridge coupled to a first gate of said first III-nitride power semiconductor device;
a second output of a second half-bridge coupled to a second gate of said second III-nitride power semiconductor device;
wherein said common III-nitride heterostructure includes a two dimensional electron gas (2-DEG) which forms a conductive channel between said source fingers and said drain fingers of said first III-nitride power semiconductor device, and a conductive channel between said source fingers and said drain fingers of said second III-nitride power semiconductor device;
wherein said two dimensional electron gas is interrupted in said common III-nitride heterostructure between said first III-nitride power semiconductor device and said second III-nitride power semiconductor device, so as to electrically isolate said conductive channel of said first III-nitride power semiconductor device from said conductive channel of said second III-nitride power semiconductor device.
7. The single semiconductor die of claim 6 , wherein said common III-nitride heterostructure includes one III-nitride semiconductor body having one band gap formed over another III-nitride semiconductor body having another band gap to generate said two-dimensional electron gas.
8. The single semiconductor die of claim 7 , wherein said one III-nitride body comprises AlGaN.
9. The single semiconductor die of claim 7 , wherein said another III-nitride body comprises GaN.
10. The single semiconductor die of claim 6 , wherein said source fingers and said drain fingers are alternately arranged in an interdigitated pattern.