IP Library Granted Patent US 9,785,171
Granted Patent B2
US 9,785,171 · App. 15/086,763 · Granted Oct 10, 2017

Apparatuses and related methods for staggering power-up of a stack of semiconductor dies

Inventor: Trismardawi Tanadi (Sacramento, CA)
Assignee: Micron Technology, Inc.
G05F1/66H01L25/0657H01L25/105H01L25/117H03K5/14H03K17/223G06F1/26H01L2924/0002H03K2005/00234
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Quick Facts
Patent No.
US 9,785,171
App. No.
15/086,763
Granted
Oct 10, 2017
Kind
B2
Abstract

An apparatus including semiconductor dies in a stack. The semiconductor dies are configured to power-up in a staggered manner. Methods for powering up an electronic device include detecting a power-up event with the semiconductor dies in the stack, and responsive to the power-up event, powering up a first semiconductor die in the stack at a first time, and powering up a second semiconductor die in the stack at a second time that is different from the first time.

Claims (57)

1. An apparatus, comprising:

a first semiconductor die including at least one first power input and a first voltage monitor; and

a second semiconductor die including at least one second power input and a second voltage monitor, wherein:

the first semiconductor die and the second semiconductor die form a stack;

the first voltage monitor is configured to generate a first power-up ok signal responsive to a power-up event detected based on a power supply voltage;

the first semiconductor die is configured to power up at a first time responsive to a first power-up go signal generated when both the first power-up ok signal and the at least one first power input are asserted;

the first semiconductor die is further configured to output a first output signal to the at least one second power input of the second semiconductor die responsive to the first die completing power up;

the second voltage monitor is configured to generate a second power-up ok signal responsive to the power-up event based on the power supply voltage;

the second semiconductor die is configured to power up at a second time responsive to a second power-up go signal generated when both the second power-up ok signal and the at least one second power input are asserted,

wherein the first voltage monitor is configured to:

detect the power-up event by monitoring a power supply voltage and detecting the power supply voltage to have a magnitude above a predetermined threshold; and

generate a reset signal responsive to detecting the magnitude of the power supply voltage to drop below a predetermined reset threshold, and wherein the first semiconductor die is configured to power down responsive to the reset signal.

2. The apparatus of claim 1 , wherein a second input signal is the first output signal from the first semiconductor die.

3. The apparatus of claim 1 , further comprising a memory device including the stack including the first semiconductor die and the second semiconductor die.

4. The apparatus of claim 3 , wherein the memory device is a virtual chip enable memory device.

5. The apparatus of claim 3 , further comprising:

a processor;

an input device; and

an output device, wherein the processor is operably coupled to the memory device, the input device, and the output device.

6. The apparatus of claim 1 , wherein the second voltage monitor is configured to detect the power-up event by monitoring a power supply voltage and detecting the power supply voltage to have a magnitude above a predetermined threshold.

7. The apparatus of claim 1 wherein the predetermined reset threshold is approximately a minimum operational voltage of the first semiconductor die.

8. An apparatus comprising:

a first semiconductor die including at least one first power input; and

a second semiconductor die including at least a second power input operably coupled to the at least one first power input, wherein the first semiconductor die and the second semiconductor die form a stack, wherein, responsive to a power-up event, the first semiconductor die is configured to power up at a first time, and the second semiconductor die is configured to power up at a second time that is different from the first time,

wherein:

the first semiconductor die is configured to power up responsive to the power-up event;

the first semiconductor die is further configured to output a first output signal to the second semiconductor die responsive to the first die completing power up;

the second semiconductor die is configured to power up responsive to receiving the first output signal from the first semiconductor die;

the first semiconductor die includes a first voltage monitor configured to generate a first power-up ok signal responsive to the power-up event, wherein the first semiconductor die is configured to power up when both the first power-up ok signal and a first input signal are asserted;

the second semiconductor die includes a second voltage monitor configured to generate a second power-up ok signal responsive to the power-up event, wherein the second semiconductor die is configured to power up when both the second power-up ok signal and a second input signal are asserted;

the first semiconductor die further includes a first AND gate operably coupled with the first voltage monitor, the first AND gate configured to generate a first power-up go signal to initiate power up of the first semiconductor die when both the first power-up ok signal and a first input signal are asserted; and

the second semiconductor die further includes a second AND gate operably coupled with the second voltage monitor, the second AND gate configured to generate a second power-up go signal to initiate power up of the second semiconductor die when both the second power-up ok signal and a second input signal are asserted.

9. A method of powering up an electronic device, the method comprising:

detecting a power-up event with a plurality of semiconductor dies in a stack of semiconductor dies within a common package;

generating a power-up ok signal responsive to detecting the power-up event;

powering up a first semiconductor die of the stack of semiconductor dies at a first time responsive to the power-up ok signal being asserted;

powering up a second semiconductor die of the stack of semiconductor dies at a second time that is different from the first time responsive to receiving a first output signal from the first semiconductor die indicating that the first semiconductor die has finished powering up, and responsive to both the power-up ok signal and the first output signal from the first semiconductor die being asserted; and

receiving, at an AND gate for the second semiconductor die, the power-up ok signal and the first output signal to generate a power-up go signal to initiate power up of the second semiconductor die.

10. The method of claim 9 , wherein generating the power-up ok signal is responsive to a first voltage monitor of the first semiconductor die detecting the power-up event, the method further comprising the second semiconductor die generating another power-up ok signal responsive to a second voltage monitor of the second semiconductor die detecting the power-up event.

11. The method of claim 10 , wherein:

generating the power-up ok signal for the first semiconductor die is responsive to the first voltage monitor detecting the power-up event by detecting a magnitude of the power supply voltage at the first semiconductor die being above a predetermined threshold; and

generating another power-up ok signal as the power-up ok signal for the second semiconductor die is responsive to detecting the power-up event by detecting the magnitude of the power supply voltage at the second semiconductor die being above the predetermined threshold.

12. The method of claim 9 , further comprising:

generating a reset signal responsive to detecting a lack of the power-up event; and

powering down the first semiconductor die and the second semiconductor die responsive to the reset signal.

13. The method of claim 12 , wherein generating a reset signal responsive to detecting a lack of the power-up event includes detecting the magnitude of a power supply signal voltage dropping below a predetermined reset threshold voltage.

14. An apparatus of comprising:

a first semiconductor die including at least one first power input and a first voltage monitor;

a second semiconductor die including at least one second power input and a second voltage monitor, wherein:

the first semiconductor die and the second semiconductor die form a stack;

the first voltage monitor is configured to generate a first power-up ok signal responsive to a power-up event detected based on a power supply voltage;

the first semiconductor die is configured to power up at a first time responsive to a first power-up go signal generated when both the first power-up ok signal and the at least one first power input are asserted;

the first semiconductor die is further configured to output a first output signal to the at least one second power input of the second semiconductor die responsive to the first die completing power up;

the second voltage monitor is configured to generate a second power-up ok signal responsive to the power-up event based on the power supply voltage;

the second semiconductor die is configured to power up at a second time responsive to a second power-up go signal generated when both the second power-up ok signal and the at least one second power input are asserted; and

a first AND gate configured to receive the first power-up ok signal and the at least one first power input and output the first power-up go signal; and

a second AND gate configured to receive the second power-up ok signal and the at least one second power input and output the second power-up go signal.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Continuity (2)
Division 14020549 · Sep 6, 2013
Related Publication 20160209859A1 · Jul 21, 2016