Spin transfer torque cell for magnetic random access memory
View Patent ↗Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.
1. A method for manufacturing spin transfer torque (STT) magnetic random access memory (MRAM) device comprising:
forming at least one conductive via over at least one first electrode;
depositing over the at least one conductive via a magnetic tunnel junction (MTJ) stack including at least a free layer;
forming a seed layer directly between the at least one conductive via and the free layer of the MTJ stack, the free layer including an excess agent;
depositing at least one second electrode over the MTJ stack; and
annealing the MRAM device to cause the at least one conductive via to absorb the excess agent.
2. The method of claim 1 , wherein the at least one conductive via has a width that is narrower than a width of the free layer such that a width of at least one active SIT area for the storage of data in the free layer is defined by the width of the at least one conductive via.
3. The method of claim 2 , further comprising:
adding an insulator between the free layer and the at least one first electrode such that the at least one conductive via is disposed laterally to the first insulator.
4. The method of claim 3 , further comprising:
applying a chemical-mechanical planarization process on a surface of the at least one conductive via.
5. The method of claim 1 , wherein the excess agent is selected from the group consisting of elements from the thirteenth, fifteenth, sixteenth and seventeenth columns of the periodic table of elements.
6. The method of claim 1 , wherein the annealing causes the excess agent to react with the free layer to increase a resistivity of portions of the free layer that are above the excess agent.
7. The method of claim 6 , wherein the annealing transforms the portions of the free layer that are above the excess agent to be non-conductive and non-magnetic.
8. The method of claim 6 , wherein the annealing is performed at a first temperature between about 200° C. and about 450° C. and wherein the depositing of the excess agent is performed at a second temperature that is lower than the first temperature.
9. The method of claim 1 , wherein the annealing increases a conductivity of a portion of the free layer that is above the at least one conductive via.
10. The method of claim 1 , further comprising:
etching through the magnetic tunnel junction stack to generate a plurality of cells such that each of the conductive vias is included in a different cell and each of the cells is defined by a separate pillar, wherein each of the pillars includes a separate stack of a reference layer, a tunnel barrier layer and the free layer.
11. The method of claim 1 , wherein the depositing of the MTJ stack includes depositing the free layer directly on the at least one conductive via.