Group III-V semiconductor device with strain-relieving layers
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.
1. A group III-V semiconductor device comprising:
at least one buffer layer situated over a substrate;
at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials;
a first strain-relieving interlayer situated over said at least one transition layer and a second strain-relieving interlayer situated over said first strain-relieving interlayer; and
a first group III-V semiconductor body situated over said second strain-relieving interlayer,
wherein said first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in said first group III-V semiconductor body,
wherein said first strain-relieving interlayer has a thickness greater than or substantially equal to 0.2 micrometers,
wherein said second strain-relieving interlayer has a thickness greater than or substantially equal to 0.01 micrometers,
wherein said first strain-relieving interlayer is thicker than said second strain-relieving interlayer.
2. The group III-V semiconductor device of claim 1 , wherein said first strain-relieving interlayer comprises gallium nitride (GaN).
3. The group III-V semiconductor device of claim 1 , wherein said second strain-relieving interlayer comprises aluminum nitride (AlN).
4. The group III-V semiconductor device of claim 1 , wherein said at least one transition layer comprises a first transition layer of aluminum gallium nitride (AlGaN) and a second transition layer of aluminum gallium nitride (AlGaN), wherein said second transition layer has a lower aluminum composition than said first transition layer.
5. The group III-V semiconductor device of claim 1 , further comprising a second group III-V semiconductor body situated over said first group III-V semiconductor body, wherein a two-dimensional electron gas (2DEG) forms at a heterojunction of said first and second group III-V semiconductor bodies.
6. The group III-V semiconductor device of claim 1 , wherein said first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
7. The group III-V semiconductor device of claim 1 , wherein said first group III-V semiconductor body has a thickness in a range between 2.5 microns and 5.0 microns.
8. A group III-V semiconductor device comprising:
at least one buffer layer situated over a substrate;
at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials;
a first strain-relieving interlayer situated over said at least one transition layer and a second strain-relieving interlayer situated over said first strain-relieving interlayer; and
a first group III-V semiconductor body situated over said second strain-relieving interlayer,
wherein said first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in said first group III-V semiconductor body,
wherein said first strain-relieving interlayer has a thickness greater than or substantially equal to 0.2 micrometers,
wherein said second strain-relieving interlayer has a thickness greater than or substantially equal to 0.01 micrometers,
wherein said first group III-V semiconductor body has a thickness greater 2.5 microns,
wherein said first strain-relieving interlayer is thicker than said second strain-relieving interlayer,
wherein said second strain-relieving interlayer comprises an aluminum nitride (AlN) layer.
9. The group III-V semiconductor device of claim 8 , further comprising a buffer layer disposed between said substrate and said at least one transition layer.
10. The group III-V semiconductor device of claim 8 , wherein said first strain-relieving interlayer comprises gallium nitride (GaN).
11. The group III-V semiconductor device of claim 8 , wherein said at least one transition layer comprises a first transition layer of aluminum gallium nitride (AlGaN) and a second transition layer of aluminum gallium nitride (AlGaN), wherein said second transition layer has a lower aluminum composition than said first transition layer.
12. The group III-V semiconductor device of claim 8 , further comprising a second group III-V semiconductor body situated over said first group III-V semiconductor body, wherein a two-dimensional electron gas (2DEG) forms at a heterojunction of said first and second group III-V semiconductor bodies.
13. The group III-V semiconductor device of claim 8 , wherein said first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
14. The group III-V semiconductor device of claim 8 , wherein said first group III-V semiconductor body has a thickness in a range between 2.5 microns and 5.0 microns.
15. A method for forming a group III-V semiconductor device over a substrate, said method comprising:
forming at least one buffer layer situated over said substrate;
forming at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials;
forming a first strain-relieving interlayer of a thickness greater than or substantially equal to 0.2 micrometers over said at least one transition layer and a second strain-relieving interlayer of a thickness greater than or substantially equal to 0.01 micrometers over said first strain-relieving interlayer, said first and second strain-relieving interlayers comprising different group III-V semiconductor materials, said first strain-relieving interlayer being thicker than said second strain-relieving interlayer; and
forming a first group III-V semiconductor body over said second strain-relieving interlayer.
16. The method of claim 15 , wherein said first strain-relieving interlayer comprises gallium nitride (GaN).
17. The method of claim 15 , wherein said second strain-relieving interlayer comprises aluminum nitride (AlN).
18. The method of claim 15 , wherein said at least one transition layer comprises a first transition layer of aluminum gallium nitride (AlGaN) and a second transition layer of aluminum gallium nitride (AlGaN), wherein said second transition layer has a lower aluminum composition than said first transition layer.
19. The method of claim 15 , further comprising forming a second group III-V semiconductor body over said first group III-V semiconductor body, wherein a two-dimensional electron gas (2DEG) is formed at a heterojunction of said first and second group III-V semiconductor bodies.
20. The method of claim 15 , wherein said first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.