Non-amine post-CMP compositions and method of use
An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.
1. A composition for cleaning residue and contaminants from a surface of a microelectronic device having said residue and contaminants thereon, said composition comprising from about 1 wt% to about 30 wt% of at least one complexing agent, from about 0.01 wt% to about 5 wt% of at least one basic compound, from about 0.01 wt% to about 10 wt% of at least one buffering agent, from about 42 wt% to about 99 wt% water, from about 0.01 wt% to about 10 wt% of at least one reducing agent, optionally from about 0.01 wt% to about 10 wt% of at least one oxidizing agent, and optionally from about 0.01 wt% to about 30 wt% of at least one solvating agent,
wherein the at least one reducing agent comprises a species selected from the group consisting of ascorbic acid, potassium disulfite, n-acetyl glycine, potassium tetraborate tetrahydrate, acetylacetone, and combinations thereof,
wherein the at least one buffering agent comprises a species selected from the group consisting of dipotassium phosphate, dibasic phosphate, tribasic phosphate, mixtures of dibasic and tribasic phosphates, mixtures of dibasic and tribasic carbonates, and combinations thereof,
wherein the composition has a pH in a range of from 7 to about 13 and
wherein the composition is a post-CMP cleaning composition that removes post-CMP residue and contaminants from a microelectronic device having the residue and contaminants thereon and is free of fluoride-containing sources and abrasive material used in chemical mechanical polishing processes and substantially devoid of amines and quaternary bases.
2. The composition of claim 1 , wherein the pH is in a range from 10.5 to about 13.
3. The composition of claim 1 , wherein the at least one basic compound comprise a species selected from the group consisting of KOH, CsOH, ammonium hydroxide, and combinations thereof.
4. The composition of claim 1 , wherein the at least one basic compound comprises KOH.
5. The composition of claim 1 , wherein the at least one complexing agent comprises a species selected from the group consisting of lactic acid, maleic acid, ascorbic acid, malic acid, citric acid, benzoic acid, fumaric acid, succinic acid, oxalic acid, malonic acid, mandelic acid, maleic anhydride, phthalic acid, aspartic acid, glutamic acid, glutaric acid, glycolic acid, glyoxylic acid, glycerin, acetylacetone, salicylhydroxamic acid, a salt thereof, or a partially neutralized form thereof, phenylacetic acid, quinic acid, pyromellitic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, gluconic acid, glyceric acid, formic acid, acetic acid, propionic acid, acrylic acid, adipic acid, itaconic acid, glucuronic acid, glycine, lysine, β-alanine, histidine, phenylalanine, cysteine, leucine, serine, arginine, threonine, asparagine, glutamine, selenocysteine, proline, valine, isoleucine, methionine, tyrosine, tryptophane, 8-hydroxyquinoline, 2,4-pentanedione, benzetetracarboxylic acid, pyruvic acid, tannic acid, sulfanilic acid, 2-hydroxyphosphonocarboxylic acid (HPAA), pyrocatecol, pyrogallol, gallic acid, ethylenediamine tetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), (1,2-cyclohexylenedinitrilo)tetraacetic acid (CDTA), iminidiacetic acid, 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), phosphonic acid, hydroxyethylidene diphosphonic acid (HEDP), 1-hydroxyethane-1,1-diphosphonic acid, nitrilo-tris(methylenephosphonic acid, ethylenediamine tetra(methylene phosphonic acid (EDTMP), salicylic acid, p-toluenesulfonic acid, 5-sulfosalicylic acid and derivatives thereof, and any combination thereof.
6. The composition of claim 1 , wherein the at least one complexing agent comprises a phosphonic acid derivative, 5-sulfosalicylic acid or derivatives thereof, an amino acid, and any combination thereof.
7. The composition of claim 1 , wherein the at least one buffering agent comprises a species selected from the group consisting of dibasic phosphate, tribasic phosphate, mixtures of dibasic and tribasic phosphate, and combinations thereof.
8. The composition of claim 1 , comprising the at least one oxidizing agent, wherein the at least one oxidizing agent comprises a species selected from the group consisting of ozone, nitric acid, bubbled air, cyclohexylaminosulfonic acid, hydrogen peroxide, FeCl 3 , oxone (2KHSO 5 ⋅KHSO 4 ⋅K2SO 4 ), ammonium peroxomonosulfate, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, ammonium hypochlorite, sodium perborate, sodium persulfate, sodium hypochlorite, potassium iodate, potassium permanganate, potassium persulfate, potassium hypochlorite, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, tetrabutylammonium peroxomonosulfate, peroxomonosulfuric acid, ferric nitrate, N-methylmorpholine-N-oxide, trimethylamine-N-oxide, triethylamine-N-oxide, pyridine-N-oxide, N-ethylmorpholine-N-oxide, N-methylpyrrolidine-N-oxide, N-ethylpyrrolidine-N-oxide, urea hydrogen peroxide, peracetic acid, periodic acid, potassium dichromate, potassium chlorate, 2-nitrophenol, 1,4-benzoquinone, peroxybenzoic acid, peroxyphthalic acid salts, vanadium oxides, ammonium metavanadate, ammonium tungstate, sodium nitrate, potassium nitrate, ammonium nitrate, strontium nitrate, sulfuric acid, and combinations thereof.
9. The composition of claim 8 , wherein the at least one oxidizing agent comprises a species selected from the group consisting of hydrogen peroxide, NMMO, urea hydrogen peroxide, and combinations thereof.
10. The composition of claim 1 , further comprising at least one solvating agent comprising a species selected from the group consisting of 2-pyrrolidinone, 1-(2-hydroxyethyl)-2-pyrrolidinone, glycerol, 1,4-butanediol, tetramethylene sulfone (sulfolane), dimethyl sulfone, ethylene glycol, propylene glycol, dipropylene glycol, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol phenyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether (DPGME), tripropylene glycol methyl ether (TPGME), dipropylene glycol dimethyl ether, dipropylene glycol ethyl ether, propylene glycol n-propyl ether, dipropylene glycol n-propyl ether (DPGPE), tripropylene glycol n-propyl ether, propylene glycol n-butyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, propylene glycol phenyl ether, and combinations thereof.
11. The composition of claim 1 , further comprising at least one solvating agent comprising sulfolane, 1-(2-hydroxyethyl)-2-pyrrolidinone, and combinations thereof.
12. The composition of claim 1 , wherein the composition comprises urea hydrogen peroxide, KOH, K 2 HPO 4 , 5-sulfosalicylic acid, and water, and the pH is in a range from about 7 to about 13.
13. The composition of claim 1 , wherein the residue and contaminants comprise post-CMP residue and contaminants selected from the group consisting of particles from a CMP polishing slurry, chemicals present in a CMP polishing slurry, reaction by-products of a CMP polishing slurry, carbon-rich particles, polishing pad particles, copper, and copper oxides.
14. The composition of claim 1 , further comprising post-CMP residue and contaminants.
15. A method of cleaning residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with the composition of claim 1 for sufficient time to at least partially clean said residue and contaminants from the microelectronic device.
16. The method of claim 15 , wherein said residue and contaminants comprise post-CMP residue and contaminants.
17. The method of claim 15 , wherein said contacting comprises a condition selected from the group consisting of: having the composition contact the microelectronic device for a contact time of from about 15 seconds to about 5 minutes; having the temperature of the composition be in a range of from about 20° C. to about 50° C.; and combinations thereof.