IP Library › Granted Patent US 10,290,908
Granted Patent B2
US 10,290,908 · App. 15/117,349 · Granted May 14, 2019

Semiconductor device and electronic device

Inventors: Junpei Momo (Kanagawa, JP); Kazutaka Kuriki (Kanagawa, JP); Hiromichi Godo (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M10/46A61N1/378G06F1/163H01L21/8221H01L27/0688H01L27/124H01L27/1218H01L27/1225H01L27/1251H01L29/7869H01L29/78651H01M10/052H01M10/0525H01M10/0562H01M10/0585H01M10/425H01M10/613H01M10/623H02J7/025H02J50/20H01M2220/30H01M2300/0071
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Quick Facts
Patent No.
US 10,290,908
App. No.
15/117,349
Granted
May 14, 2019
Kind
B2
Abstract

A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

Claims (44)

1. A semiconductor device comprising:

a first transistor;

a second transistor; and

a secondary battery,

wherein the first transistor, the second transistor, and the secondary battery are provided over a substrate,

wherein a channel region of the first transistor comprises silicon,

wherein a channel region of the second transistor comprises an oxide semiconductor,

wherein the secondary battery comprises a solid electrolyte, and

wherein a source electrode or a drain electrode of the second transistor is electrically connected to a positive electrode current collector layer of the secondary battery.

2. The semiconductor device according to claim 1 ,

wherein the substrate is flexible.

3. The semiconductor device according to claim 1 ,

wherein the secondary battery has a function of being wirelessly charged.

4. The semiconductor device according to claim 1 ,

wherein the secondary battery comprises lithium, and

wherein an insulating film comprising halogen is provided between the secondary battery and the first transistor or between the secondary battery and the second transistor,

wherein the source electrode or the drain electrode of the second transistor is electrically connected to the positive electrode current collector layer of the secondary battery with the insulating film located therebetween.

5. The semiconductor device according to claim 1 ,

wherein a cooling device is provided over the secondary battery.

6. The semiconductor device according to claim 1 ,

wherein the secondary battery comprises a portion that is fabricated by a semiconductor manufacturing process.

7. An electronic device comprising a display device and the semiconductor device according to claim 1 .

8. A semiconductor device comprising:

a first transistor over a substrate;

a second transistor over the first transistor; and

a secondary battery over the second transistor,

wherein the first transistor, the second transistor, and the secondary battery are overlapped with each other,

wherein a channel region of the first transistor comprises silicon,

wherein a channel region of the second transistor comprises an oxide semiconductor,

wherein the secondary battery comprises a solid electrolyte, and

wherein a source electrode or a drain electrode of the second transistor is electrically connected to a positive electrode current collector layer of the secondary battery.

9. The semiconductor device according to claim 8 ,

wherein the substrate is flexible.

10. The semiconductor device according to claim 8 ,

wherein the secondary battery has a function of being wirelessly charged.

11. The semiconductor device according to claim 8 ,

wherein the secondary battery comprises lithium, and

wherein an insulating film comprising halogen is provided between the secondary battery and the first transistor or between the secondary battery and the second transistor,

wherein the source electrode or the drain electrode of the second transistor is electrically connected to the positive electrode current collector layer of the secondary battery with the insulating film located therebetween.

12. The semiconductor device according to claim 8 ,

wherein a cooling device is provided over the secondary battery.

13. The semiconductor device according to claim 8 ,

wherein the secondary battery comprises a portion that is fabricated by a semiconductor manufacturing process.

14. An electronic device comprising a display device and the semiconductor device according to claim 8 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2016
From: MOMO, JUNPEI; KURIKI, KAZUTAKA; GODO, HIROMICHI; YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 039999/0400 →
Priority Claims (1)
JP 2014-026312 · Feb 14, 2014 · national
Continuity (1)
Related Publication 20160351975A1 · Dec 1, 2016
Cited By (2)
US 12,237,331 US 12,271,241