CMOS logic element including oxide semiconductor
Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.
1. A Complementary Metal Oxide Semiconductor (CMOS) logic element comprising:
a substrate;
first and second transistors disposed in a first area over the substrate;
a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure has a second area vertically spaced apart from the substrate; and
a third transistor and a fourth transistor provided in the second area,
wherein two of the first to fourth transistors are one of an NMOS transistor and a PMOS transistor, and the other two of the first to fourth transistors are the other one of the NMOS transistor and the PMOS transistor,
wherein two of the first to fourth transistors include a channel including any one of a silicon and an oxide semiconductor, and the other two of the first to fourth transistors comprise a channel including the other one of silicon and oxide semiconductor,
wherein the first transistor and the second transistor are transistors of the same type, and the third transistor and the fourth transistor are transistors of the same type.
2. The CMOS logic element of claim 1 , wherein the oxide semiconductor comprises at least one of In, Ga, Zn, Sn, K, Al, Ti, and W.
3. The CMOS logic element of claim 1 , wherein the oxide semiconductor is InMO 3 (ZnO) m (m≥0),
where m comprises any one or more of metal elements selected from Gallium (Ga), tin (Sn), potassium (K), aluminum (Al), iron (Fe), nickel (Ni), manganese (Mn), and cobalt (Co).
4. The CMOS logic element of claim 1 , wherein the first transistor is connected between a power node and an output node and operates in response to a first input signal,
wherein the second transistor is connected between the power node and the output node and operates in response to a second input signal,
wherein the third transistor is connected between the ground node and the intermediate node and operates in response to the first input signal,
wherein the fourth transistor is connected between the intermediate node and the output node and operates in response to the second input signal,
wherein a first channel of the first transistor and a second channel of the second transistor are implemented with silicon,
wherein a third channel of the third transistor and a fourth channel of the fourth transistor are implemented with an oxide semiconductor.
5. The CMOS logic element of claim 1 , wherein the first and second transistors are PMOS transistors,
wherein the third and fourth transistors are NMOS transistors.
6. The CMOS logic element of claim 1 , wherein the first and second transistors are NMOS transistors,
wherein the third and fourth transistors are PMOS transistors.
7. The CMOS logic element of claim 1 , wherein the first and second transistors are complementarily connected to the third and fourth transistors through the wiring layer stacked vertically.
8. The CMOS logic element of claim 1 , wherein the first and second transistors are disposed on the same layer,
wherein the third and fourth transistors are disposed on the same layer.