Semiconductor device using Ge channel and manufacturing method thereof
According to one embodiment, a semiconductor device includes a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit, a metal electrode provided above the first complementary semiconductor device, a semiconductor layer provided above the metal electrode, including an nMOS region and a pMOS region separated from each other, and containing Ge; and a second complementary semiconductor device including an nMOSFET provided on the first portion of the semiconductor layer and a pMOSFET provided on the second portion of the semiconductor layer.
1. A semiconductor device comprising:
a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit;
a metal electrode provided above the first complementary semiconductor device;
a semiconductor layer provided above the metal electrode, including an nMOS region and a pMOS region separated from each other, and containing Ge;
a second complementary semiconductor device including an nMOSFET provided on the nMOS region of the semiconductor layer and a pMOSFET provided on the pMOS region of the semiconductor layer;
a work function control layer provided between the metal electrode and the semiconductor layer including the nMOS region and the pMOS region; and
an insulating film provided between the semiconductor layer and the work function control layer.
2. The device of claim 1 , wherein the metal electrode comprises a first portion below the nMOS region and a second portion below the pMOS region and separated from the first portion.
3. The device of claim 2 , further comprising:
a first signal line connected to the first portion of the metal electrode; and
a second signal line connected to the second portion of the metal electrode independently.
4. The device of claim 2 , further comprising a common signal line connected to the first portion of the metal electrode and the second portion of the metal electrode.
5. The device of claim 1 , wherein the work function control layer comprises one of TiN and TaN, and the insulating film comprises a rare-earth oxide.
6. The device of claim 1 , wherein the work function control layer comprises one of TiN and TaN, and the insulating film comprises one of a hafnium oxide, an aluminum oxide and a hafnium aluminum oxide.
7. The device of claim 1 , wherein the metal electrode is included in an uppermost layer of wiring layers above the first complementary semiconductor device, and the second complementary semiconductor device is electrically connected to the first complementary semiconductor device.
8. The device of claim 1 , wherein the metal electrode is included in an intermediate layer of wiring layers above the first complementary semiconductor device, and the second complementary semiconductor device is electrically connected to the first complementary semiconductor device.
9. The device of claim 1 , wherein the first complementary semiconductor device is provided on a Si substrate.