Silicon die with integrated high voltage devices
A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnects, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
1. A method comprising:
forming a plurality of first devices on a substrate;
forming a plurality of first interconnects on the substrate wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices;
coupling a second substrate to ones of the plurality of first interconnects;
subsequent to coupling the second substrate to the ones of the plurality of first interconnects coupled to the ones of the plurality of first devices, forming a plurality of second devices on the second substrate to form a second device layer, wherein the second device layer is electrically coupled to ones of the plurality of first interconnects;
forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and
forming contact points to ones of the plurality of first interconnects, the contact points operable for connection to an external source.
2. The method of claim 1 , wherein one of the plurality of first devices and the plurality of second devices comprise devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
3. The method of claim 1 , wherein the substrate comprises a sacrificial substrate, the method further comprising:
coupling the sacrificial substrate to a carrier substrate; and
removing the sacrificial substrate.
4. The method of claim 3 , wherein the plurality of the second devices comprise devices disposed at a finer pitch than a pitch of the plurality of first devices and coupling the sacrificial substrate to the carrier substrate comprises disposing the plurality of second interconnects between the device layer and the carrier substrate.
5. The method of claim 1 , wherein forming a plurality of second interconnects comprises forming an interconnect stack comprising the plurality of second interconnects and a plurality of memory devices.
6. The method of claim 1 , wherein one of the plurality of first devices comprise devices and the plurality of second devices are disposed at a finer pitch than a pitch of the other plurality of first devices and the plurality of second devices and one of the plurality of first devices and the plurality of second devices comprise devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
7. The method of claim 6 , wherein forming a plurality of second devices comprises coupling the second devices to at least one of the plurality of first interconnects.
8. The method of claim 6 , wherein coupling a device layer to ones of the plurality of first interconnects on the substrate comprises forming the plurality of second devices in a device layer on a second substrate and, after coupling the device layer to ones of the plurality of first interconnects, the method comprises thinning the second substrate.
9. A method comprising:
forming a first device layer comprising a plurality of first devices;
forming a plurality of first interconnects wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices;
juxtaposing a second substrate to ones of the plurality of first interconnects;
subsequent to juxtaposing the second substrate to the ones of the plurality of first interconnects coupled to the ones of the plurality of first devices, forming a plurality of second devices on the second substrate to form a second device layer, wherein the second device layer is electrically coupled to ones of the plurality of first interconnects;
forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and
juxtaposing contact points to ones of the plurality of first interconnects, the contact points operable for connection to an external source,
wherein one of the plurality of first devices and the plurality of second devices comprise devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
10. The method of claim 9 , wherein the first device layer is formed on a sacrificial substrate, the method further comprising:
coupling the sacrificial substrate to a carrier substrate; and
removing the sacrificial substrate.
11. The method of claim 10 , wherein the plurality of the second devices comprise devices disposed at a finer pitch than a pitch of the plurality of first devices and coupling the sacrificial substrate to the carrier substrate comprises disposing the plurality of second interconnects between the device layer and the carrier substrate.
12. The method of claim 9 , wherein forming a plurality of second interconnects comprises forming an interconnect stack comprising the plurality of second interconnects and a plurality of memory devices.
13. The method of claim 9 , wherein juxtaposing a second device layer to ones of the plurality of first interconnects comprises forming the plurality of second devices in a device layer on a substrate and, after juxtaposing the second device layer to ones of the plurality of first interconnects, the method comprises thinning the second substrate.