Invert operations using sensing circuitry

1. An apparatus, comprising:

an array of memory cells; and

sensing circuitry coupled to the array, the sensing circuitry comprising:

a plurality of sensing components coupled to a controller via a number of control lines; and

wherein the controller is configured to selectively activate a first control line and a second control line to invert signals stored on a latch, wherein the first control line is coupled to a gate of a first isolation transistor and a gate of a second isolation transistor and wherein the second control line is coupled to a source/drain region of a first invert transistor and a source/drain region of a second invert transistor.

2. The apparatus of claim 1 , wherein the controller is configured to:

activate the first control line and the second control line to transfer a first signal from the latch to a gate of a first invert transistor; and

transfer a second signal from the latch to a gate of a second invert transistor.

3. The apparatus of claim 1 , wherein the controller is configured to deactivate the first control line to:

isolate a first invert transistor from the latch and store a first signal on a gate of a first invert transistor;

isolate a second invert transistor from the latch and store a second signal on the gate of a second invert transistor.

4. The apparatus of claim 1 , wherein the controller is configured to:

deactivate the second control line to pull down a first data line coupled to a first invert transistor such that the first signal and the second signal invert in the latch; and wherein the first signal is on a first node in the latch coupled to a second data line and the second signal is on a second node in the latch coupled to the first data line.

5. The apparatus of claim 4 , wherein the first signal enables the first invert transistor and the second signal does not enable on the second invert transistor.

6. The apparatus of claim 1 , wherein the controller is configured to:

activate the first control line and the second control line to transfer an inverted first signal from the latch to a gate of a second invert transistor and to transfer an inverted second signal from the latch to a gate of a first invert transistor.

7. An apparatus, comprising:

an array of memory cells; and

sensing circuitry coupled to the array of memory cells, wherein the sensing circuitry is configured to receive control signals from a controller; and

wherein the sensing circuitry comprises:

a first group of sensing components coupled to the controller via a first number of control lines; and

a second group of sensing components coupled to the controller via a second number of control lines; and

wherein the controller is configured to selectively activate at least one of the first number of control lines and the second number of control lines to invert signals stored on the first group of sensing components; and

wherein the first number of control lines are coupled to gates of a number of first isolation transistors and gates of a number of second isolation transistors and wherein the second number of control lines are coupled to source/drain regions of a number of first invert transistors and source/drain regions of a number of second invert transistors.

8. The apparatus of claim 7 , wherein the first group of sensing components comprise a latch.

9. The apparatus of claim 7 , wherein the second group of sensing components comprises a first isolation transistor, a second isolation transistor, a first invert transistor, and a second invert transistor.

10. The apparatus of claim 7 , wherein the second group of sensing components are configured to invert signals stored on the first group of sensing components in response to sensing signals provided to the second group of sensing components.

11. A method, comprising:

selectively activating a first control line to send a first control signal to a first isolation transistor and a second isolation transistor;

selectively activating a second control line to second a second control signal to a first invert transistor and a second invert transistor; and

inverting a first data value and a second data value stored in a latch in response to deactivating the first control signal and the second control signal.

12. The method of claim 11 , wherein the method further comprises sending the first control signal and second control signal simultaneously to transfer a first signal from the latch to the first invert transistor and to transfer a second signal from the latch to the second invert transistor.

13. The method of claim 11 , wherein the method further comprises deactivating the first control line to store a first signal on the first invert transistor and to store a second signal on the second invert transistor.

14. The method of claim 11 , wherein the method further comprises deactivating the second control line to pull down a data line coupled to the first invert transistor causing a first signal and a second signal to invert in the latch so that the first signal is on a first node in the latch coupled to a second data line and the second signal is on a second node in the latch coupled to the data digit line.

15. The method of claim 11 , wherein the method further comprises activating the first control line and the second control line to transfer an inverted first signal from the latch to a gate of the second invert transistor and to transfer an inverted second signal from the latch to a gate of the first invert transistor.

16. A method, comprising:

inverting a first signal stored on a first node of a latch and a second signal stored on a second node of the latch by deactivating a first control line coupled to a source/drain region of a first invert transistor to pull down a data line coupled to the first invert transistor causing the first signal to be stored on the second node in the latch and the second signal to be stored on the first node in the latch.

17. The method of claim 16 , wherein the first node is coupled to a first data line and the second node is coupled to a second data line.

18. The method of claim 16 , wherein the method further comprises storing the first signal on the first invert transistor and storing the second signal on a second invert transistor.

19. The method of claim 18 , wherein the method further comprises activating a first isolation transistor and a second isolation transistor to transfer the first signal to the first invert transistor and the second signal to the second invert transistor.

20. The method of claim 18 , wherein storing the first signal on the first invert transistor and storing the second signal on the second invert transistor includes deactivating a first isolation transistor and a second isolation transistor.

21. An apparatus, comprising:

an array of memory cells; and

sensing circuitry coupled to the array, the sensing circuitry comprising:

a first isolation transistor coupled to a first data line and an isolation control line, a second isolation transistor coupled to a second data line and the isolation control line, a first invert transistor coupled to the first data line and an invert control line, and a second invert transistor coupled to the second data line and the invert control line, wherein the invert control line is coupled to a source/drain region of the first invert transistor and a source/drain region of the second invert transistor,

wherein isolation control line and the invert control line is coupled to a controller configured to selectively activate the isolation control line and the invert control line to perform an invert operation on signals stored on a latch.

22. The apparatus of claim 21 , wherein a first signal is stored on a first node of the latch and a second signal is stored on a second node of the latch prior to the invert operation.

23. The apparatus of claim 22 , wherein the first signal is stored on the second node of the latch and the second signal is stored on the first node of the latch in response to the invert operation.

24. The apparatus of claim 21 , wherein the controller is configured to activate the isolation control line and the invert control line to:

transfer a first signal from the latch to a gate of the first invert transistor; and

transfer a second signal from the latch to a gate of the second invert transistor.

25. The apparatus of claim 21 , wherein the controller is configured to deactivate the isolation control line to:

isolate the first invert transistor from the latch and store a first signal on a gate of the first invert transistor;

isolate the second invert transistor from the latch and store a second signal on a gate of the second invert transistor.

26. The apparatus of claim 21 , wherein the controller is configured to:

deactivate the second control line to pull down the first data line coupled to the first invert transistor such that a first signal and the second signal invert in the latch; and

wherein the first signal is on a first node in the latch coupled to a second data line and the second signal is on a second node in the latch coupled to the first data line.

27. The apparatus of claim 26 , wherein the first signal enables the first invert transistor and the second signal does not enable on the second invert transistor.

28. The apparatus of claim 21 , wherein the controller is configured to:

activate the isolation control line and the invert control line to transfer an inverted first signal from the latch to a gate of the second invert transistor and to transfer an inverted second signal from the latch to a gate of the first invert transistor.

29. The apparatus of claim 28 , wherein the inverted first signal and the inverted second signal are transferred to a compute component.

30. The apparatus of claim 28 , wherein the inverted first signal and the inverted second signal are transferred off the array via an I/O line.