Liquid crystal display device and electronic device including the liquid crystal display device
In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×10 14 /cm 3 .
1. A display device including a first display and a second display, each comprising:
a transistor;
a first insulating film over the transistor;
a signal line over the first insulating film, the signal line being electrically connected to a first terminal of the transistor and supplying an image signal to the first terminal of the transistor;
a second insulating film over the signal line;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to a second terminal of the transistor; and
a liquid crystal layer over the pixel electrode,
wherein a channel forming region of the transistor includes an oxide semiconductor,
wherein a refresh operation of supplying the image signal to the pixel electrode is performed before a potential of the pixel electrode becomes 1% lower than an initial potential of the pixel electrode in a still image mode,
wherein a specific resistance of a liquid crystal material in the liquid crystal layer measured at 20° C. is 1×10 12 Ω·cm or more,
wherein the first display comprises a first display part including the pixel electrode, a first side part and a second side part,
wherein the second display comprises a second display part including the pixel electrode, a third side part, and a fourth side part,
wherein the first display part is provided between the first side part and the second side part,
wherein the second display part is provided between the third side part and the fourth side part, and
wherein a connector is connected to the second side part and the third side part.
2. The display device according to claim 1 , wherein a hydrogen concentration of the channel forming region is 5 ×10 19 atoms/cm 3 or less.
3. The display device according to claim 1 , wherein an off-current per micrometer of a channel width of the transistor is 5 ×10 −17 A/μm or less.
4. The display device according to claim 1 , wherein the channel forming region includes a crystalline part.
5. The display device according to claim 1 , wherein the first insulating film is any one selected among a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, and an aluminum oxynitride film.
6. The display device according to claim 1 , wherein the second insulating film is an organic planarization film.
7. The display device according to claim 1 , wherein an interval of the refresh operation is 10 seconds or longer.
8. A display device including a first display and a second display, each comprising:
a transistor;
a first insulating film over the transistor;
a signal line over the first insulating film, the signal line being electrically connected to a first terminal of the transistor and supplying an image signal to the first terminal of the transistor;
a second insulating film over the signal line;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to a second terminal of the transistor; and
a liquid crystal layer over the pixel electrode,
wherein a channel forming region of the transistor includes an oxide semiconductor,
wherein the oxide semiconductor comprises indium, gallium, and zinc,
wherein a refresh operation of supplying the image signal to the pixel electrode is performed before a potential of the pixel electrode becomes 1% lower than an initial potential of the pixel electrode in a still image mode,
wherein a specific resistance of a liquid crystal material in the liquid crystal layer measured at 20° C. is 1×10 12 Ω·cm or more,
wherein the first display comprises a first display part including the pixel electrode, a first side part and a second side part,
wherein the second display comprises a second display part including the pixel electrode, a third side part, and a fourth side part,
wherein the first display part is provided between the first side part and the second side part,
wherein the second display part is provided between the third side part and the fourth side part, and
wherein a connector is connected to the second side part and the third side part.
9. The display device according to claim 8 , wherein a hydrogen concentration of the channel forming region is 5×10 19 atoms/cm 3 or less.
10. The display device according to claim 8 , wherein an off-current per micrometer of a channel width of the transistor is 5×10 −17 A/μm or less.
11. The display device according to claim 8 , wherein the channel forming region includes a crystalline part.
12. The display device according to claim 8 , wherein the first insulating film is any one selected among a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, and an aluminum oxynitride film.
13. The display device according to claim 8 , wherein the second insulating film is an organic planarization film.
14. The display device according to claim 8 , wherein an interval of the refresh operation is 10 seconds or longer.