Light-emitting device and method for manufacturing the same
A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.
1. A light-emitting device, comprising:
a substrate;
a first light-emitting unit (LEU) and a second light-emitting unit (LEU) apart disposed on the substrate and exposing a portion of the substrate therebetween, wherein the first LEU has a first sidewall and a second sidewall and the second LEU has a third sidewall and a fourth sidewall; and
a conductive bridge layer electrically connecting the first LEU and the second LEU, wherein the conductive bridge layer is continuously disposed on the second sidewall, the exposed portion of the substrate and the third sidewall,
wherein a slope of the second sidewall is smaller than a slope of the first sidewall.
2. The light-emitting device according to claim 1 , further comprising an insulating layer covering the second sidewall and exposing the third side wall, wherein the conductive bridge layer is disposed on the insulating layer on the second sidewall and directly contacts one of a first type semiconductor layer and a second type semiconductor layer of the second LEU on the third sidewall.
3. The light-emitting device according to claim 1 , wherein an angle between the second sidewall and the substrate is smaller than 70 degrees.
4. The light-emitting device according to claim 3 , wherein the angle between the second sidewall and the substrate is smaller than 50 degrees.
5. The light-emitting device according to claim 1 , wherein a slope of the third sidewall is smaller than a slope of the fourth sidewall.
6. The light-emitting device according to claim 5 , wherein an angle between the third sidewall and the substrate is smaller than 70 degrees.
7. The light-emitting device according to claim 6 , wherein the angle between the third sidewall and the substrate is smaller than 50 degrees.
8. A light-emitting device, comprising:
a substrate;
a first light-emitting unit (LEU) and a second light-emitting unit (LEU) apart disposed on the substrate and exposing a portion of the substrate therebetween, wherein the first LEU has a first sidewall and a second sidewall and the second LEU has a third sidewall and a fourth sidewall;
a conductive bridge layer electrically connecting the first LEU and the second LEU, wherein the conductive bridge layer is continuously disposed on the second sidewall, the exposed portion of the substrate and the third sidewall; and
an insulating layer covering the second sidewall and exposing the third side wall, wherein the conductive bridge layer is disposed on the insulating layer on the second sidewall and directly contacts one of a first type semiconductor layer and a second type semiconductor layer of the second LEU on the third sidewall.
9. The light-emitting device according to claim 8 , wherein an angle between the second sidewall and the substrate is smaller than 70 degrees.
10. The light-emitting device according to claim 9 , wherein the angle between the second sidewall and the substrate is smaller than 50 degrees.
11. The light-emitting device according to claim 8 , wherein an angle between the third sidewall and the substrate is smaller than 70 degrees.
12. The light-emitting device according to claim 11 , wherein the angle between the third sidewall and the substrate is smaller than 50 degrees.
13. The light-emitting device according to claim 8 , wherein a slope of the third sidewall is smaller than a slope of the fourth sidewall.