Substrate-to-carrier adhesion without mechanical adhesion between abutting surfaces thereof
Wafer to carrier adhesion without mechanical adhesion for formation of an IC. In such formation, an apparatus has a bottom surface of a substrate abutting a top surface of a support platform without adhesive therebetween. A material is disposed around the substrate and on the top surface of the support platform. The material is in contact with a side surface of the substrate to completely seal an interface as between the bottom surface of the substrate and the top surface of the support platform to retain abutment of the top surface and the bottom surface.
1. An apparatus, comprising:
a substrate;
a support platform;
wherein a bottom surface of the substrate abuts a top surface of the support platform without adhesive therebetween;
a material disposed around the substrate and on the top surface of the support platform;
wherein the material is in contact with a side surface of the substrate to completely seal an interface as between the bottom surface of the substrate and the top surface of the support platform to retain abutment of the top surface and the bottom surface.
2. The apparatus according to claim 1 , wherein maximum thickness of the material in a vertical direction orthogonal to the top surface is equivalent to thickness of the substrate.
3. The apparatus according to claim 1 , wherein the material restrains lateral movement of the substrate.
4. The apparatus according to claim 3 , wherein the material is an encapsulation material.
5. The apparatus according to claim 3 , wherein the support platform thickness is more than twice that of a final thickness of the substrate.
6. The apparatus according to claim 3 , wherein:
the substrate is a bare wafer; and
the bottom surface of the bare wafer is a backside surface.
7. The apparatus according to claim 3 , wherein:
the substrate is a wafer having been back-end-of-line processed;
the bottom surface of the wafer is a front side surface; and
the wafer has one or more through silicon vias.
8. The apparatus according to claim 1 , wherein:
the support platform includes a raised step along the top surface;
wherein the bottom surface of the substrate abuts a portion of the top surface of the support platform associated with the raised step without the adhesive therebetween;
the material is disposed around the substrate, on the top surface of the support platform and underneath a perimeter edge portion of the bottom surface of the substrate that extends out from the portion of the top surface associated with the raised step;
wherein the material is in contact with the side surface of the substrate and the perimeter edge portion of the bottom surface of the substrate to completely seal the interface as between the bottom surface of the substrate and the portion of the top surface of the support platform associated with the raised step to retain abutment of the top surface and the bottom surface.
9. The apparatus according to claim 8 , wherein maximum thickness of the material in a vertical direction orthogonal to the top surface is equivalent to thickness of the substrate plus height of the raised step.
10. An apparatus, comprising:
a substrate;
a support platform;
a membrane;
wherein the membrane is disposed at least between a bottom surface of the substrate and a top surface of the support platform without adhesive therebetween for attachment to the bottom surface of the substrate;
a material disposed around the substrate and on the top surface of the membrane;
wherein the material seals an interface as between the bottom surface of the substrate and the top surface of the membrane to retain abutment of the bottom surface to the membrane and the support platform in combination.
11. The apparatus according to claim 10 , wherein the membrane is a thin polymer film coupled to the support platform with a vacuum between them.
12. The apparatus according to claim 10 , wherein the membrane is attached to the support platform without using an adhesive.
13. An apparatus, comprising:
a substrate that has undergone back-end-of-line (BEOL) processing, the BEOL processing including inter-level dielectrics and one or more levels of metallization;
a support platform;
wherein a bottom surface of the substrate abuts a top surface of the support platform without adhesive therebetween;
a material disposed around the substrate and on the top surface of the support platform;
wherein the material is in contact with a side surface of the substrate to completely seal an interface as between the bottom surface of the substrate and the top surface of the support platform to retain abutment of the top surface and the bottom surface.
14. The apparatus according the claim 3 , wherein the substrate has undergone back-end-of-line (BEOL) processing, the BEOL processing including inter-level dielectrics and one or more levels of metallization.
15. The apparatus according to claim 7 , wherein the back-end-of-line processed wafer includes inter-level dielectrics and one or more levels of metallization.
16. The apparatus according to claim 8 , wherein the substrate has undergone back-end-of-line (BEOL) processing, the BEOL processing including inter-level dielectrics and one or more levels of metallization.
17. The apparatus according to claim 10 , wherein the substrate has undergone back-end-of-line (BEOL) processing, the BEOL processing including inter-level dielectrics and one or more levels of metallization.