IP Library Granted Patent US 9,842,994
Granted Patent B2
US 9,842,994 · App. 15/143,791 · Granted Dec 12, 2017

Peeling method and method of manufacturing semiconductor device

Inventors: Toru Takayama (Kanagawa, JP); Junya Maruyama (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/003B32B7/06B32B43/006G02F1/1368H01L21/76251H01L27/1214H01L27/1266H01L27/3246H01L27/3248H01L27/3258H01L29/6675H01L29/66757H01L29/78663H01L51/0097H01L51/56B32B2310/0843B32B2457/08B32B2457/14G02F2001/13613H01L21/3221H01L27/3244H01L51/529H01L51/5237H01L51/5246H01L2227/323H01L2227/326H01L2251/5338Y10S438/977Y10T156/1137Y10T156/1939
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Quick Facts
Patent No.
US 9,842,994
App. No.
15/143,791
Granted
Dec 12, 2017
Kind
B2
Abstract

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( 11 ) and a second material layer ( 12 ) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer ( 12 ) or an interface thereof.

Claims (46)

1. A method of manufacturing a display device comprising:

forming an organic material layer over a first substrate;

forming a first insulating film over the organic material layer;

forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer;

forming a second insulating film over the thin film transistor;

forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor;

forming a light emitting layer over the pixel electrode, the light emitting layer comprising an organic material;

forming a second electrode over the light emitting layer;

forming a third insulating film over the second electrode;

attaching a first resin film to the third insulating film by an adhesive layer between the first resin film and the third insulating film;

irradiating the organic material layer with a laser light through the first substrate after attaching the first resin film;

separating the first substrate from the organic material layer after the irradiating with the laser light; and

attaching a second resin film to the organic material layer by a second adhesive layer between the second resin film and the organic material layer.

2. The method according to claim 1 , wherein the organic material layer has a compressive stress.

3. The method according to claim 1 , further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress.

4. The method according to claim 1 , wherein the laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer.

5. The method according to claim 1 , wherein only a portion of the organic material layer is irradiated with the laser light.

6. A method of manufacturing a display device comprising:

forming an organic material layer over a first substrate;

forming a first insulating film over the organic material layer;

forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer;

forming a second insulating film over the thin film transistor;

forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor;

irradiating the organic material layer with a linear shape laser light through the first substrate, wherein the organic material layer is scanned with the linear shape laser light along a first direction;

separating the first substrate from the organic material layer after the irradiating with the linear shape laser light, wherein the step of separating the first substrate is performed along the first direction; and

attaching a resin film to the organic material layer by an adhesive layer between the resin film and the organic material layer.

7. The method according to claim 6 , wherein the organic material layer has a compressive stress.

8. The method according to claim 6 , further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress.

9. The method according to claim 6 , wherein the linear shape laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer.

10. A method of manufacturing a display device comprising:

forming an organic material layer over a first substrate;

forming a first insulating film over the organic material layer;

forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer;

forming a second insulating film over the thin film transistor;

forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor;

forming a light emitting layer over the pixel electrode, the light emitting layer comprising an organic material;

forming a second electrode over the light emitting layer;

forming a third insulating film over the second electrode, the third insulating film comprising a material selected from the group consisting of aluminum nitride, aluminum nitride oxide, aluminum oxynitride, and aluminum oxide;

attaching a first resin film to the third insulating film by an adhesive layer between the first resin film and the third insulating film;

irradiating the organic material layer with a laser light through the first substrate after attaching the first resin film;

separating the first substrate from the organic material layer after the irradiating with the laser light; and

attaching a second resin film to the organic material layer by a second adhesive layer between the second resin film and the organic material layer.

11. The method according to claim 10 , wherein the organic material layer has a compressive stress.

12. The method according to claim 10 , further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress.

13. The method according to claim 10 , wherein the laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer.

14. The method according to claim 10 , wherein only a portion of the organic material layer is irradiated with the laser light.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2016
From: TAKAYAMA, TORU; MARUYAMA, JUNYA; YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 038744/0927 →
Priority Claims (1)
JP 2001-251870 · Aug 22, 2001 · national
Continuity (7)
Division 15059623 · Mar 3, 2016
Continuation 14207759 · Mar 13, 2014
Division 13466212 · May 8, 2012
Continuation 12477966 · Jun 4, 2009
Continuation 12016274 · Jan 18, 2008
Continuation 10218042 · Aug 14, 2002
Related Publication 20160248013A1 · Aug 25, 2016