Packages with stacked dies and methods of forming the same
A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.
1. A package comprising:
a package substrate;
a first device die over and bonded to the package substrate;
a die stack bonded to the first device die, the die stack comprising:
a second device die electrically coupled to the first device die, wherein the first device die extends laterally beyond respective edges of the second device die; and
a third device die bonded to the second device die, wherein the second device die extends laterally beyond respective edges of the third device die, and wherein the second device die and the third device die have identical integrated circuits, and the first device die has circuits different from circuits of the second device die and the third device die;
a metal lid attached to a top surface of the package substrate and a top surface of the first device die; and
a Thermal Interface Material (TIM) adjoining the die stack to the metal lid.
2. The package of claim 1 , wherein the package substrate extends laterally beyond edges of the first device die.
3. The package of claim 1 , wherein the first device die is bonded between the second device die and the package substrate, and the second device die is bonded between the first device die and the third device die.
4. The package of claim 3 further comprising an underfill between the first device die and the second device die, wherein the underfill comprises a first side in contact with the first device die, and a second side in contact with the second device die, and the first side extends laterally farther away from a center of the second device die than the second side.
5. The package of claim 1 , wherein the first device die is bonded between the third device die and the package substrate, and the third device die is bonded between the first device die and the second device die.
6. The package of claim 5 further comprising an underfill between the second device die and the third device die, wherein the underfill comprises a first side in contact with the second device die, and a second side in contact with the third device die, and the first side extends laterally farther away from a center of the second device die than the second side.
7. The package of claim 1 , wherein the die stack further comprises a fourth device die bonded to the third device die, wherein the second, the third, and the fourth device dies have identical integrated circuits.
8. The package of claim 7 , wherein respective edges of the second device die, the third device die, and the fourth device die are vertically aligned to each other.
9. The package of claim 1 , wherein all device dies in the die stack include memory dies that have identical memory circuits, and wherein the first device die includes a logic device die.
10. A package comprising:
a package substrate;
a logic device die over and bonded to the package substrate;
a die stack over the logic device die, the die stack comprising:
a first memory die over and electrically coupled to the logic device die; and
a second memory die over and bonded to the first memory die, wherein the first memory die and the second memory die have identical memory circuits, and the first memory die has a first area smaller than a second area of the second memory die;
an adhesive over and contacting the logic device die; and
a metal lid comprising a first portion over and contacting the adhesive, and a second portion overlapping the die stack.
11. The package of claim 10 further comprising a first underfill between the first memory die and the second memory die, wherein the first underfill comprises a first side in contact with the second memory die, and a second side in contact with the first memory die, and the first side extends laterally farther away from a center of the first underfill than the second side.
12. The package of claim 11 further comprising a second underfill between the logic device die and the die stack, wherein the second underfill comprises a third side in contact with the logic device die, and a fourth side in contact with the die stack, and the third side extends laterally farther away from a center of the second underfill than the fourth side.
13. The package of claim 10 , wherein the die stack further comprises a third memory die, wherein the first, the second, and the third memory dies have identical memory circuits, and edges of the third memory die are vertically aligned to edges of the first memory die.
14. A package comprising:
a package substrate;
a logic device die over and bonded to the package substrate;
a first memory die over and bonded to the logic device die;
a second memory die over and bonded to the first memory die, wherein the first memory die and the second memory die have identical memory circuits, and the first memory die has a first top-view area greater than a second top-view area of the second memory die;
an adhesive over and contacting the logic device die; and
a metal lid contacting the adhesive, and the metal lid further comprises a portion overlapping the second memory die.
15. The package of claim 14 further comprising a first underfill between the logic device die and the first memory die, wherein the first underfill has a first side in contact with the logic device die, and a second side in contact with the first memory die, and the first side extends laterally farther away from a center of the first underfill than the second side.
16. The package of claim 15 further comprising a second underfill between the first memory die and the second memory die, wherein the second underfill comprises a third side in contact with the first memory die, and a fourth side in contact with the second memory die, and the third side extends laterally farther away from a center of the second underfill than the fourth side.
17. The package of claim 14 further comprising a third memory die over and bonded to the second memory die, wherein the first, the second, and the third memory dies have identical memory circuits, and edges of the third memory die are vertically aligned to edges of the second memory die.
18. The package of claim 1 , wherein the metal lid comprises a portion having a bottom surface contacting a top surface of the TIM.
19. The package of claim 10 further comprising a Thermal Interface Material (TIM) over and contacting a top surface of the die stack, wherein the second portion of the metal lid has a bottom surface contacting a top surface of the TIM.
20. The package of claim 14 further comprising a Thermal Interface Material (TIM) overlapping the first memory die and the second memory die, wherein the metal lid comprises an additional portion having a bottom surface contacting a top surface of the TIM.