3D NAND memory Z-decoder
View Patent ↗Apparatus and methods are disclosed, including an apparatus having first and second units of vertically arranged strings of memory cells, each unit including multiple tiers of a semiconductor material, each tier including an access line of at least one memory cell and a channel of a decoder transistor, wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second unit of memory cells. Methods of forming such apparatus are disclosed, as well as methods of operation, and other embodiments.
1. An apparatus comprising:
first and second units of vertically arranged strings of memory cells, each unit including multiple tiers of semiconductor material, each tier including an access line of at least one memory cell; and
a first drive transistor selectively coupled to the access line of a first tier of the first unit through a first decoder transistor, and selectively coupled to the access line of a first tier of the second unit through a second decoder transistor,
wherein each tier of the multiple tiers of the first and second units includes the access line of at least one memory cell and a channel of a decoder transistor, and
wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second unit of memory cells.
2. The apparatus of claim 1 ,
wherein each of the first and second units of vertically arranged strings of memory cells include pillars of semiconductor material extending through each of the multiple tiers, the pillars including a first pillar having a channel of at least one of the memory cells and a second pillar having a gate of at least one of the decoder transistors.
3. The apparatus of claim 2 ,
wherein the first pillar extends through the multiple tiers between a source line and a data line, and
wherein the data line of the first unit is coupled to the data line of the second unit, or the source line of the first unit is coupled to the source line of the second unit.
4. The apparatus of claim 1 ,
wherein each of the first and second units of vertically arranged strings of memory cells includes additional tiers of semiconductor material, the additional tiers including a first additional tier having a gate of at least one source-side select gate (SGS) and a second additional tier having a gate of at least one drain-side select gate (SGD).
5. The apparatus of claim 4 ,
wherein each of the first and second additional tiers includes a channel of a respective decoder transistor,
wherein the channel of the decoder transistor of the first additional tier of the first unit of memory cells is coupled to the channel of the decoder transistor of the first additional tier of the second unit of memory cells, and
wherein the channel of the decoder transistor of the second additional tier of the first unit of memory cells is coupled to the channel of the decoder transistor of the second additional tier of the second unit of memory cells.
6. The apparatus of claim 1 , including:
a third unit of vertically arranged strings of memory cells, including multiple tiers of semiconductor material, each tier including an access line of at least one memory cell, and
wherein the first drive transistor is selectively coupled to the access lines of a first tier of the third unit through a third decoder transistor.
7. The apparatus of claim 6 ,
wherein the third unit of vertically arranged strings of memory cells is stacked on top of the second unit of vertically arranged strings of memory cells, and the second unit of vertically arranged strings of memory cells is stacked on top of the first unit of vertically arranged strings of memory cells.
8. The apparatus of claim 6 ,
wherein each tier of the multiple tiers of the first, second, and third units includes an access line of at least one memory cell and a channel of a decoder transistor, and
wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second and third units of memory cells.
9. The apparatus of claim 6 , including:
a fourth unit of vertically arranged strings of memory cells, including multiple tiers of semiconductor material, each tier including an access line of at least one memory cell, and
wherein the first drive transistor is selectively coupled to the access line of a first tier of the fourth unit through a fourth decoder transistor.
10. The apparatus of claim 1 ,
wherein operation of the first and second decoder transistors are independent of one another.
11. The apparatus of claim 1 ,
wherein the second unit of vertically arranged strings of memory cells is stacked on top of the first unit of vertically arranged strings of memory cells.
12. The apparatus of claim 1 ,
wherein the first and second units of vertically arranged strings of memory cells each include an array of three-dimensional, tiered memory cells.
13. The apparatus of claim 1 ,
wherein the access line for each of the multiple tiers couples a control gate of each memory cell of a respective tier across a unit of memory cells.
14. The apparatus of claim 1 ,
wherein the first drive transistor is one of a plurality of drive transistors in a string driver having a respective drive transistor selectively coupled to each of the multiple tiers of the first and second units through a respective decoder transistor, the plurality of drive transistors including:
a second drive transistor selectively coupled to the access line of a second tier of the first unit through a third decoder transistor, and selectively coupled to the access line of a second tier of the second unit through a fourth decoder transistor.
15. A method comprising:
selectively coupling an access line of at least one memory cell of a first tier of semiconductor material in a first unit of vertically arranged strings of memory cells to a first drive transistor using first and second states of a first decoder transistor; and
selectively coupling an access line of at least one memory cell of a first tier of semiconductor material in a second unit of vertically arranged strings of memory cells to the first drive transistor using first and second states of a second decoder transistor,
wherein each of the first and second units includes multiple tiers of semiconductor material, each tier including an access line of at least one memory cell and a channel of a decoder transistor, and
wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second unit of memory cells.
16. The method of claim 15 , including:
selectively coupling an access line of at least one memory cell of a first tier of semiconductor material in a third unit of vertically arranged strings of memory cells to the first drive transistor using first and second states of a third decoder transistor.
17. The method of claim 16 ,
wherein each tier of the multiple tiers of the first, second, and third units includes an access line of at least one memory cell and a channel of a decoder transistor, and
wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second and third units of memory cells.
18. The method of claim 15 ,
wherein the first and second units of vertically arranged strings of memory cells each include an array of three-dimensional, tiered memory cells,
wherein the second unit of vertically arranged strings of memory cells is stacked on top of the first unit of vertically arranged strings of memory cells, and
wherein operation of the first and second decoder transistors are independent of one another.
19. An apparatus comprising:
first and second units of vertically arranged strings of memory cells, each unit including multiple tiers of semiconductor material, each tier including an access line of at least one memory cell; and
a first drive transistor selectively coupled to the access line of a first tier of the first unit through a first decoder transistor, and selectively coupled to the access line of a first tier of the second unit through a second decoder transistor,
wherein each of the first and second units of vertically arranged strings of memory cells includes additional tiers of semiconductor material, the additional tiers including a first additional tier having a gate of at least one source-side select gate (SGS) and a second additional tier having a gate of at least one drain-side select gate (SGD).
20. The apparatus of claim 19 ,
wherein each of the first and second additional tiers includes a channel of a respective decoder transistor,
wherein the channel of the decoder transistor of the first additional tier of the first unit of memory cells is coupled to the channel of the decoder transistor of the first additional tier of the second unit of memory cells, and
wherein the channel of the decoder transistor of the second additional tier of the first unit of memory cells is coupled to the channel of the decoder transistor of the second additional tier of the second unit of memory cells.
21. The apparatus of claim 19 ,
wherein each tier of the multiple tiers of the first and second units includes the access line of at least one memory cell and a channel of a decoder transistor, and
wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second unit of memory cells.
22. The apparatus of claim 21 ,
wherein each of the first and second units of vertically arranged strings of memory cells include pillars of semiconductor material extending through each of the multiple tiers, the pillars including a first pillar having a channel of at least one of the memory cells and a second pillar having a gate of at least one of the decoder transistors.
23. The apparatus of claim 19 , including:
a third unit of vertically arranged strings of memory cells, including multiple tiers of semiconductor material, each tier including an access line of at least one memory cell, and
wherein the first drive transistor is selectively coupled to the access lines of a first tier of the third unit through a third decoder transistor.
24. The apparatus of claim 23 ,
wherein the third unit of vertically arranged strings of memory cells is stacked on top of the second unit of vertically arranged strings of memory cells, and the second unit of vertically arranged strings of memory cells is stacked on top of the first unit of vertically arranged strings of memory cells,
wherein each tier of the multiple tiers of the first, second, and third units includes an access line of at least one memory cell and a channel of a decoder transistor, and
wherein the channel of the decoder transistor of each of the multiple tiers of the first unit of memory cells is coupled to the channel of the decoder transistor of a corresponding tier of the second and third units of memory cells.
25. The apparatus of claim 23 , including:
a fourth unit of vertically arranged strings of memory cells, including multiple tiers of semiconductor material, each tier including an access line of at least one memory cell, and
wherein the first drive transistor is selectively coupled to the access line of a first tier of the fourth unit through a fourth decoder transistor.