SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device, and method of manufacturing thereof, that comprises a redistribution structure formed on a stiffening layer.
1 . A semiconductor device comprising:
an interposer comprising:
a stiffener layer comprising a top stiffener surface, a bottom stiffener surface, and a conductive via that extends from the top stiffener surface to the bottom stiffener surface; and
a redistribution structure comprising a top redistribution structure surface, and a bottom redistribution structure surface coupled to the top stiffener surface; and
a semiconductor die connected to the top redistribution structure surface.
2 . The semiconductor device of claim 1 , wherein the stiffener layer comprises: a silicon layer, a glass layer, and/or a ceramic layer.
3 . The semiconductor device of claim 1 , wherein the conductive via has a cross-section shaped like an inverted trapezoid with a top via end at the top stiffener surface wider than a bottom via end at the bottom stiffener surface.
4 . The semiconductor device of claim 1 , wherein a top via surface of the conductive via has a greater diameter than a bottom via surface of the conductive via.
5 . The semiconductor device of claim 1 , comprising a seed layer and an insulation layer between the conductive via and the stiffener.
6 . The semiconductor device of claim 1 , further comprising a conductive bump coupled to a bottom via end of the conductive via.
7 . The semiconductor device of claim 6 , further comprising an under bump metal between the conductive via and the conductive bump.
8 . The semiconductor device of claim 1 , wherein a side surface of the conductive via comprises scallops.
9 . The semiconductor device of claim 1 , comprising an insulation layer surrounding a side surface of the conductive via, wherein the insulation layer comprises scallops.
10 . A semiconductor device comprising:
an interposer comprising:
a stiffener layer comprising a top stiffener surface, a bottom stiffener surface, and a conductive via that extends from the top stiffener surface to the bottom stiffener surface;
a redistribution structure comprising a top redistribution structure surface, and a bottom redistribution structure surface coupled to the top stiffener surface; and
a conductive pillar extending from a bottom via surface of the conductive via; and
a semiconductor die connected to the top redistribution structure surface.
11 . The semiconductor device of claim 10 , wherein the entire conductive pillar has a smaller width than a width of the conductive via.
12 . The semiconductor device of claim 11 , wherein the conductive pillar has a cross-section shaped like an inverted trapezoid with a top pillar end wider than a bottom pillar end.
13 . The semiconductor device of claim 12 , wherein the conductive via has a cross-section shaped like an inverted trapezoid with a top via end wider than a bottom via end.
14 . The semiconductor device of claim 10 , wherein the bottom conductive pillar extends from the bottom stiffener surface.
15 . The semiconductor device of claim 10 , comprising a conductive bump coupled to a bottom pillar end of the conductive pillar.
16 . The semiconductor device of claim 10 , wherein the conductive via and the conductive pillar are integrally formed with each other.
17 . The semiconductor device of claim 10 , comprising a seed layer and an insulation layer, wherein:
a first portion of the seed layer and a first portion of the insulation layer are between the conductive via and the stiffener; and
a second portion of the seed layer and a second portion of the insulation layer are between the conductive pillar and the stiffener.
18 . The semiconductor device of claim 10 , wherein the entire conductive pillar extends from the bottom stiffener surface.
19 . A method of manufacturing a semiconductor device, the method comprising:
providing an interposer comprising:
a stiffener layer comprising a top stiffener surface, a bottom stiffener surface, and a conductive via that extends from the top stiffener surface to the bottom stiffener surface; and
a redistribution structure comprising a top redistribution structure surface, and a bottom redistribution structure surface coupled to the top stiffener surface; and
attaching a semiconductor die to the top redistribution structure surface.
20 . The method of claim 19 , wherein the interposer comprises a conductive pillar extending from a bottom via surface of the conductive via.