Textured optoelectronic devices and associated methods of manufacture
Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
1. An optoelectronic device, comprising:
an optoelectronic transducer having at least a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials;
a texturing material including titanium deposited over the optoelectronic transducer; and
a transparent conductive material on the texturing material, wherein the transparent conductive material has a plurality of protuberances projecting away from the texturing material.
2. The device of claim 1 wherein the transparent conductive material comprises indium tin oxide.
3. The device of claim 1 wherein the texturing material has a thickness from about 30 angstroms to about 60 angstroms.
4. The device of claim 1 , further comprising a mask deposited over at least a portion of the texturing material.
5. The device of claim 1 wherein the protuberances of the transparent conductive material comprise a plurality of irregular pillars in a random pattern across the optoelectronic transducer.
6. The device of claim 1 wherein the solid state optoelectronic transducer includes a N-type gallium nitride (GaN) material, an indium gallium nitride (InGaN) material over the N-type material, and a P-type GaN material over the InGaN material.
7. An optoelectronic device, comprising:
an optoelectronic transducer having a first semiconductor material, a second semiconductor material, and an active region positioned between the first and second semiconductor materials;
a texturing material positioned on the second semiconductor material;
a conductive material positioned on the texturing material and having a plurality of protuberances extending outwardly in a direction away from the texturing material, wherein the plurality of protuberances comprise a plurality of irregular pillars, wherein the conductive material is a first portion of conductive material;
a mask positioned on at least a portion of the texturing material; and
a second portion of conductive material positioned on the mask, wherein the first portion of the conductive material and the second portion of the conductive material form a pattern via absence and presence of the plurality of protuberances.
8. The optoelectronic device of claim 7 wherein the plurality of protuberances have a density, a size, a shape, an arrangement, or a combination thereof characteristic of a heating temperature used to grow the plurality of protuberances.
9. The optoelectronic device of claim 7 wherein the texturing material includes a plurality of ridges and valleys, and wherein the ridges and valleys define a pattern for the plurality of protuberances.