V-shaped SiGe recess volume trim for improved device performance and layout dependence
Some embodiments of the present disclosure relates to a method of forming a transistor device having a strained channel and an associated device. In some embodiments, the method is performed by performing a first etch of a substrate to produce a recess having a largest width at an opening along a top surface of the substrate. An etch stop layer is formed by doping a bottom surface of the recess with a dopant. A second etch of the recess is then performed to form a source/drain recess, wherein the etch stop layer resists etching of the second etch. A stress inducing material is formed within the source/drain recess onto the etch stop layer.
1. A method of recess formation, comprising:
performing a first etch of a substrate to produce a recess having a largest width at an opening along a top surface of the substrate;
forming an etch stop layer by doping a bottom surface of the recess with a dopant;
performing a second etch of the recess to form a source/drain recess, wherein the etch stop layer resists etching of the second etch and wherein the source/drain recess has angled sidewalls that vertically extend to positions below a top surface of the etch stop layer; and
forming a stress-inducing material on the etch stop layer within the source/drain recess.
2. The method of claim 1 , wherein the recess comprises a U-shaped etch profile having curved sidewalls.
3. The method of claim 1 , wherein the source/drain recess has an etch profile comprising a substantially flat bottom surface.
4. The method of claim 1 , wherein the source/drain recess has an etch profile that is symmetric about a line bisecting the source/drain recess.
5. The method of claim 1 , wherein the source/drain recess has an etch profile comprising opposing planar sidewalls that are angled away from the etch stop layer in opposing directions.
6. A method of forming a semiconductor device, comprising:
etching a substrate to produce a recess having curved sidewalls;
implanting a bottom surface of the recess with a dopant to form an etch stop layer along the bottom surface;
etching the recess to form a source/drain recess, wherein the etch stop layer resists etching and wherein the source/drain recess laterally extends past outermost sidewalls of the etch stop layer in opposing directions; and
forming a stress-inducing material on the etch stop layer within the source/drain recess.
7. The method of claim 6 , wherein the stress-inducing material is arranged along opposing sidewalls of the etch stop layer.
8. The method of claim 6 , wherein the source/drain recess has angled sidewalls that vertically extend to positions below a top surface of the etch stop layer.
9. The method of claim 6 , wherein the stress-inducing material has a curved upper surface facing away from the etch stop layer.
10. The method of claim 6 , wherein the source/drain recess has angled sidewalls that directly contact opposing sidewalls of the etch stop layer.
11. The method of claim 6 , wherein implanting the dopant into the bottom surface of the recess distorts a crystalline structure of the bottom surface.
12. The method of claim 6 , wherein the dopant is implanted at an energy of greater than approximately 2E13 keV, and results in the etch stop layer having a boron concentration of approximately 1e18 atoms/cm 3 .
13. A semiconductor device, comprising:
a source region and a drain region comprising a stress-inducing material arranged within a substrate;
an etch stop layer arranged along lower surfaces of the source region and the drain region, wherein the source region and the drain region have angled sidewalls that directly contact opposing sidewalls of the etch stop layer symmetrically; and
a gate structure arranged over the substrate at a location that is between the source region and the drain region.
14. The semiconductor device of claim 13 , wherein the source region and the drain region laterally extend past outermost sidewalls of the etch stop layer in opposing directions.
15. The semiconductor device of claim 13 , wherein the source region comprises opposing sidewalls that are angled away from the etch stop layer in opposing directions.
16. The semiconductor device of claim 13 , wherein the stress-inducing material is arranged along opposing sidewalls of the etch stop layer.
17. The semiconductor device of claim 13 , wherein the source region is symmetric about a vertical line bisecting the etch stop layer arranged along a lower surface of the source region.
18. The semiconductor device of claim 13 , wherein the etch stop layer has a boron concentration of greater than approximately 1e20 atoms/cm 3 below the stress-inducing material in the source region and the drain region.
19. The semiconductor device of claim 13 , wherein the angled sidewalls of the source region and the drain region directly contact opposing outermost sidewalls of the etch stop layer.
20. The semiconductor device of claim 13 , wherein the stress-inducing material within the source region has a first width along a line that is co-planar with an upper surface of the substrate, which is greater than a second width of the stress-inducing material along a bottom surface of the source region.