IP Library Granted Patent US 9,812,433
Granted Patent B2
US 9,812,433 · App. 15/153,188 · Granted Nov 7, 2017

Batch process fabrication of package-on-package microelectronic assemblies

Inventors: Belgacem Haba (Saratoga, CA); Ilyas Mohammed (Santa Clara, CA); Liang Wang (Milpitas, CA)
Assignee: Invensas Corporation
H01L25/50H01L21/56H01L21/561H01L21/565H01L23/13H01L23/3157H01L23/5389H01L24/17H01L24/81H01L25/0657H01L25/105H01L23/49816H01L23/49827H01L2224/131H01L2224/133H01L2224/1329H01L2224/13109H01L2224/13111H01L2224/16227H01L2224/32225H01L2224/4824H01L2224/48227H01L2224/73204H01L2224/73265H01L2224/81805H01L2224/92125H01L2225/06524H01L2225/06527H01L2225/06544H01L2225/06582H01L2225/1023H01L2225/1041H01L2225/1058H01L2924/15333
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Quick Facts
Patent No.
US 9,812,433
App. No.
15/153,188
Granted
Nov 7, 2017
Kind
B2
Abstract

A microelectronic assembly can be made by joining first and second subassemblies by electrically conductive masses to connect electrically conductive elements on support elements of each subassembly. A patterned layer of photo-imageable material may overlie a surface of one of the support elements and have openings with cross-sectional dimensions which are constant or monotonically increasing with height from the surface of that support element, where the masses extend through the openings and have dimensions defined thereby. An encapsulation can be formed by flowing an encapsulant into a space between the joined first and second subassemblies.

Claims (36)

1. A microelectronic assembly, comprising:

first and second support elements each having a first surface facing in an outward direction of the assembly and each having a second surface facing in an inward direction of the assembly, the second surface of each of the first and second support elements respectively face one another, and the first and second support elements including at least one of: first terminals at the first surface of the first support element, or second terminals at the first surface of the second support element;

electrically conductive first elements at the second surface of the first support element;

a patterned layer of photo-imageable material overlying the second surface of the first support element;

electrically conductive masses of bonding material coupled to provide electrical conductivity to the electrically conductive first elements and extending through the patterned layer toward the second surface of the second support element;

a microelectronic element mounted to the second surface of one of the first and second support elements; and

electrically conductive second elements at the second surface of the second support element, the electrically conductive second elements electrically coupled with the electrically conductive masses and electrically coupled with the electrically conductive first elements through the electrically conductive masses.

2. The microelectronic assembly of claim 1 , wherein each mass of the electrically conductive masses has a cross-sectional dimension which is constant or progressively increasing as the mass extends from the second surface of the first support element towards the second surface of the second support element.

3. The microelectronic assembly of claim 1 , further comprising an encapsulation layer between the second surface of the second support element and the second surface of the first support element.

4. The microelectronic assembly of claim 3 , wherein the encapsulation layer overlies the second surface of the second support element and a surface of the patterned layer, and contacts at least some of the electrically conductive masses.

5. The microelectronic assembly of claim 4 , wherein the electrically conductive masses extend through at least a portion of the encapsulation layer.

6. The microelectronic assembly of claim 3 , wherein the electrically conductive masses comprise bulbous portions, wherein the electrically conductive masses extend through at least a portion of the encapsulation layer.

7. The microelectronic assembly of claim 6 , wherein the encapsulation layer is formed in contact with a surface of the patterned layer and in contact with the second surface of the second support element.

8. The microelectronic assembly of claim 1 , wherein the first terminals are coupled with the second terminals through the electrically conductive first elements, the electrically conductive second elements, and the electrically conductive masses.

9. The microelectronic assembly of claim 1 , wherein the first terminals are coupled with the electrically conductive second elements through the electrically conductive masses.

10. The microelectronic assembly of claim 1 , wherein the second terminals are electrically coupled with the electrically conductive first elements through the electrically conductive masses.

11. The microelectronic assembly of claim 1 , wherein the microelectronic element has a face facing away from the second support element, and the encapsulation layer is a first encapsulation layer formed in contact with at least one of: the face of the microelectronic element or a second encapsulation layer formed on the face of the microelectronic element.

12. The microelectronic assembly of claim 1 , further comprising:

a microelectronic package overlying the first surface of the first support element, the microelectronic package having third terminals connected with the first terminals of the microelectronic assembly.

13. The microelectronic assembly of claim 12 , wherein a minimum pitch of the first terminals is larger than a minimum pitch of the electrically conductive first elements.

14. The microelectronic assembly of claim 13 , wherein the minimum pitch of the first terminals is the same as a minimum pitch of the second terminals.

15. An assembly for a microelectronic device, comprising:

support elements each having a first surface facing in an outward direction and a second surface facing in an inward direction of the assembly, the second surface of each of a first support element and a second support element of the support elements facing one another;

at least one of the support elements including first contacts at the first surface respectively thereof;

second contacts at the second surface of the first support element of the support elements;

a first dielectric layer in contact with a portion of the second surface of the first support element;

masses of electrically conductive bonding material respectively coupled at first ends thereof for electrical conductivity to the second contacts and extending through holes defined in the first dielectric layer and extending beyond a surface of the first dielectric layer facing toward the second surface of the second support element of the support elements;

a second dielectric layer in contact with at least the surface of the first dielectric layer and a portion of the second surface of the second support element and on portions of the masses extending beyond the surface of the first dielectric layer; and

third contacts at the second surface of the second support element respectively coupled for electrical conductivity to second ends of the masses opposite the first ends thereof.

16. The assembly according to claim 15 , wherein:

the first dielectric layer is a layer of a photo imageable material; and

the second dielectric layer is an encapsulation material.

17. The assembly according to claim 15 , wherein:

a recess is defined by the first dielectric layer for receipt of a portion of the second dielectric layer and a portion of a microelectronic element; and

the microelectronic element is coupled to the second surface of the second support element.

18. The assembly according to claim 15 , wherein the portions of the masses extending beyond the surface of the first dielectric layer comprise bulbous portions.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0661 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073689/0793 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 17, 2016
From: HABA, BELGACEM; MOHAMMED, ILYAS; WANG, LIANG
To: INVENSAS CORPORATION
Reel/Frame 038619/0037 →
Continuity (3)
Continuation 14953565 · Nov 30, 2015
Division 14230388 · Mar 31, 2014
Related Publication 20160260696A1 · Sep 8, 2016