Enhancing nucleation in phase-change memory cells
Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.
1. A method, comprising:
placing a plurality of phase-change memory (PCM) cells in a memory array in a state of pre-structural ordering of molecules of PCM material within the PCM cells, including
applying a nucleation signal to the plurality of PCM cells to form nucleation sites to provide the pre-structural ordering prior to the molecules being placed in a subsequent crystalline-growth phase, the pre-structural ordering of the molecules within the PCM material to allow for a faster phase change of the PCM material into various levels of crystallinity during the subsequent crystalline-growth phase; and
maintaining an approximate temperature that allows cells within the memory array to remain within a nucleation phase of the pre-structural ordering prior to the subsequent crystalline-growth phase.
2. The method of claim 1 , wherein the nucleation signal has a rising edge increasing in amplitude over a non-zero timeframe.
3. The method of claim 1 , wherein at least a portion of the nucleation signal includes a signal portion having a non-zero ramp-up time having a variable rising-edge signal.
4. The method of claim 3 , wherein the non-zero ramp-up time is substantially longer than a practical lower limit of a ramp-up time.
5. The method of claim 3 , wherein the signal portion having a non-zero rising-edge time having the variable rising-edge signal is followed by a plateau-region signal portion of the nucleation signal.
6. The method of claim 1 , wherein at least a portion of the nucleation signal includes a signal portion having a non-zero rising-edge time.
7. The method of claim 6 , wherein the signal portion having the non-zero rising-edge time includes a step-wise incremental signal.
8. The method of claim 6 , wherein the signal portion having a non-zero rising-edge time is followed by applying a plateau-region signal portion of the nucleation signal.
9. The method of claim 8 , wherein the signal portion having a non-zero rising-edge time is followed by a time period prior to applying the plateau-region signal portion of the nucleation signal.
10. The method of claim 6 , wherein an amplitude of the signal portion having a non-zero rising-edge time has a maximum amplitude that is different from an amplitude of the plateau-region signal portion of the nucleation signal.
11. The method of claim 6 , wherein an amplitude of the signal portion having a non-zero rising-edge time has a maximum amplitude that is substantially the same as an amplitude of the plateau-region signal portion of the nucleation signal.
12. The method of claim 1 , further comprising applying a SET programming signal to at least a portion of the plurality of PCM cells subsequent to applying the nucleation signal.
13. The method of claim 12 , further comprising making a determination of a time period between application of the nucleation signal and the SET programming signal.
14. The method of claim 1 , further comprising selecting an amplitude of the nucleation signal to form crystal nucleation sites during a nucleation phase inside amorphous ones of the plurality of PCM cells.
15. An apparatus to program a plurality of phase-change memory (PCM) cells within a memory array, the apparatus comprising:
at least one signal generator configured to apply a nucleation signal to the PCM cells to form nucleation sites within molecules of PCM material within the memory array, the nucleation sites being a state of pre-structural ordering of the molecules of the PCM material within the PCM cells prior to the molecules being placed in a subsequent crystalline-growth phase, the pre-structural ordering of the molecules within the PCM material to allow for a faster phase change of the PCM material into various levels of crystallinity during the subsequent crystalline-growth phase; and
the apparatus configured to maintain an approximate temperature that allows cells within the memory array to remain within a nucleation phase of the pre-structural ordering prior to the subsequent crystalline-growth phase.
16. The apparatus of claim 15 , wherein the nucleation signal is configured to have a non-zero rising-edge.
17. The apparatus of claim 15 , the at least one signal generator being further configured to apply a programming signal to achieve a desired level of crystallinity within selected ones of the plurality of the PCM cells.
18. The apparatus of claim 15 , wherein the at least one signal generator comprises a nucleation signal generator to generate selectively a non-zero timeframe constant rising-edge of the nucleation signal and a non-zero timeframe variable rising-edge of the nucleation signal.
19. The apparatus of claim 15 , wherein the at least one signal generator is further to generate a non-zero timeframe rising-edge of the nucleation signal as a step-wise incremental signal.
20. The apparatus of claim 15 , wherein the at least one signal generator is to generate at least a portion of the nucleation signal to include a signal portion having a variable nonzero ramp-up time.
21. A method of programming a plurality of phase-change memory (PCM) cells within a memory array, the method comprising:
applying a nucleation signal to the PCM cells to form nucleation sites within the memory array, the nucleation sites being a pre-structural ordering of molecules of PCM material within the PCM cells occurring prior to the molecules being placed in a subsequent crystalline-growth phase, the pre-structural ordering of the molecules within the PCM material alloy to allow for a faster phase change of the PCM material into various levels of crystallinity during the subsequent crystalline-growth phase;
maintaining an approximate temperature that allows cells within the memory array to remain within a nucleation phase of the pre-structural ordering prior to the subsequent crystalline-growth phase; and
subsequently applying a programming signal to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells.
22. A method, comprising:
applying a signal to a plurality of phase-change memory (PCM cells) cells to achieve a nucleation phase in at least a portion of the plurality of PCM cells, the nucleation phase being a pre-structural ordering of molecules of PCM material within the at least a portion of the PCM cells, the pre-structural ordering of the molecules within the PCM material alloy to allow for a faster phase change of the PCM material into various levels of crystallinity during a subsequent crystalline-growth phase; and
maintaining an approximate temperature that allows cells within the memory array to remain within the nucleation phase of the pre-structural ordering prior to the subsequent crystalline-growth phase.
23. The method of claim 22 , further comprising providing a wide current window in which to form nucleation regions during the nucleation phase.
24. The method of claim 22 , further comprising selecting the signal to have a variable rising-edge increasing in amplitude over a non-zero timeframe.
25. The method of claim 22 , further comprising making a determination of a time period over which to apply the signal to the plurality of PCM cells prior to applying a programming signal.