Integrated photodetector waveguide structure with alignment tolerance
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.
1. A sensor structure, comprising:
a waveguide structure bounded by one or more shallow trench isolation (STI) structures;
a photodetector fully landed and directly on a planar top surface of the waveguide structure, adjacent to the one or more STI structures; and
an encapsulating material of a single material fully encapsulating and surrounding the photodetector, wherein the encapsulating material is landed fully on and within confines of the waveguide structure.
2. The sensor structure of claim 1 , wherein the waveguide structure is tapered.
3. The sensor structure of claim 1 , wherein the waveguide structure is continuously tapered.
4. The sensor structure of claim 3 , wherein the photodetector is continuously tapered.
5. The sensor structure of claim 4 , wherein the continuously tapered photodetector is fully landed on a planar surface of the continuously tapered waveguide structure.
6. The sensor structure of claim 4 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
7. The sensor structure of claim 6 , wherein the double tapered photodetector includes a taper at its input end portion.
8. The sensor structure of claim 6 , wherein the continuously tapered waveguide structure is formed from silicon material or silicon on insulator material.
9. The sensor structure of claim 1 , wherein at least a portion of the encapsulating material encapsulating lateral sides of the photodetector land on the waveguide structure.
10. The sensor structure of claim 1 , wherein the photodetector contacts the waveguide structure through a hole in the encapsulating material.
11. The sensor structure of claim 10 , wherein the photodetector is continuously tapered and fully lands on a planar surface of the waveguide structure.
12. The sensor structure of claim 11 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
13. The sensor structure of claim 12 , wherein the double tapered photodetector includes a taper at its input end portion.
14. The sensor structure of claim 10 , wherein the waveguide structure is one of tapered and continuously tapered.
15. The sensor structure of claim 1 , wherein the encapsulating material is over divots or recesses in the STI structures.
16. The sensor structure of claim 15 , wherein the divots or recesses are at a junction between an insulator material and an active semiconductor layer.
17. The sensor structure of claim 1 , wherein the encapsulating material is nitride or oxide.
18. The sensor structure of claim 1 , wherein the encapsulating material is in direct contact with the waveguide structure and the photodetector.
19. The sensor structure of claim 1 , wherein the encapsulating material is dielectric material.