Type III-V and type IV semiconductor device formation
Forming a semiconductor device is disclosed, according to embodiments of the present disclosure. Forming the semiconductor device can include forming a first semiconductor layer directly on a silicon substrate. Forming the semiconductor device can include forming a second semiconductor layer directly on the first semiconductor layer and forming an insulating trench in the second semiconductor layer. Forming the semiconductor device can include removing the second portion of the second semiconductor layer, and forming a third semiconductor layer directly on the first semiconductor layer and adjacent to the insulating trench such that the first portion of second semiconductor layer is electrically insulated from the third semiconductor layer. The first semiconductor layer and the third semiconductor layer can each be a type III-V semiconductor and the second semiconductor layer can be a type IV semiconductor.
1. A method of forming a semiconductor device comprising:
forming a first semiconductor layer directly on a silicon substrate, the first semiconductor layer having a first region adjacent to an interface between the first semiconductor layer and the silicon substrate and a second region adjacent to the first region, the first region including a first concentration of defects and the second region including a second concentration of defects;
forming a second semiconductor layer directly on the first semiconductor layer;
forming an insulating trench in the second semiconductor layer defining a first portion of the second semiconductor layer electrically insulated from a second portion of the second semiconductor layer;
removing the second portion of the second semiconductor layer; and
forming a third semiconductor layer directly on the first semiconductor layer and adjacent to the insulating trench such that the first portion of second semiconductor layer is electrically insulated from the third semiconductor layer;
wherein the first semiconductor layer and the third semiconductor layer are each a type III-V semiconductor and the second semiconductor layer is a type IV semiconductor, and wherein the second concentration of defects is less than the first concentration of defects.
2. The method according to claim 1 , further comprising:
etching a first set of trenches in the second semiconductor layer, the first set of trenches etched through the second semiconductor layer to define a first set of semiconductor fins from the second semiconductor layer; and
etching a second set of trenches in the third semiconductor layer, the second set of trenches etched through the third semiconductor layer to define a second set of semiconductor fins from the third semiconductor layer.
3. The method according to claim 1 , wherein:
the second semiconductor layer is formed directly on the first semiconductor layer using a wafer bonding technique.
4. The method according to claim 1 , wherein:
removing the second portion of the second semiconductor layer includes:
masking the first portion of the second semiconductor layer using an insulating material; and
etching the second portion of the second semiconductor layer through to the first semiconductor layer.
5. The method according to claim 1 , wherein:
the first semiconductor layer is a semi-insulating type III-V semiconductor.
6. The method according to claim 1 , wherein:
the first semiconductor layer is a thickness approximately within a range of 500 nanometers to 5 microns.
7. A method of forming a semiconductor device comprising:
forming a first semiconductor layer directly on a silicon substrate, the first semiconductor layer having a first region adjacent to an interface between the first semiconductor layer and the silicon substrate and a second region adjacent to the first region, the first region including a first concentration of defects and the second region including a second concentration of defects;
forming a first insulating layer directly on the first semiconductor layer;
forming a second semiconductor layer directly on the first insulating layer;
forming an insulating trench in the second semiconductor layer and the first insulating layer defining a first portion of the second semiconductor layer and a first portion of the first insulating layer electrically insulated from a second portion of the second semiconductor layer and a second portion of the first insulating layer;
removing the second portion of the second semiconductor layer and the second portion of the first insulating layer; and
forming a third semiconductor layer directly on the first semiconductor layer adjacent to the insulating trench such that the third semiconductor layer is electrically insulated from the first portion of the second semiconductor layer and the first portion of the first insulating layer;
wherein the first semiconductor layer and the third semiconductor layer are each a type III-V semiconductor and the second semiconductor layer is a type IV semiconductor, and wherein the second concentration of defects is less than the first concentration of defects.
8. The method according to claim 7 , further comprising:
etching a first set of trenches in the second semiconductor layer, the first set of trenches etched through the second semiconductor layer to define a first set of semiconductor fins from the second semiconductor layer; and
etching a second set of trenches in the third semiconductor layer, the second set of trenches etched through the third semiconductor layer to define a second set of semiconductor fins from the third semiconductor layer.
9. The method according to claim 7 , wherein:
the second semiconductor layer is formed directly on the first semiconductor layer using a wafer bonding technique.
10. The method according to claim 7 , wherein:
removing the second portion second semiconductor layer includes:
masking the first portion of the second semiconductor layer using an insulating material; and
etching the second portion of the second semiconductor layer through to the first semiconductor layer.
11. The method according to claim 7 , wherein:
the first semiconductor layer is a semi-insulating type III-V semiconductor.
12. The method according to claim 7 , wherein:
the first semiconductor layer is a wide bandgap type III-V semiconductor.
13. The method according to claim 7 , wherein:
the first semiconductor layer is a thickness approximately within a range of 500 nanometers to 10 microns.