Hybrid airgap structure with oxide liner
A technique relates to an airgap structure. A dielectric layer is formed on an underlying layer. Copper filled trenches are formed in the dielectric layer, and a metal liner lines the copper filled trenches. An oxide liner lines the metal liner and covers the dielectric layer. One or more airgaps are formed between the copper filled trenches in areas in which the oxide liner was not present on the dielectric layer. A cap layer is formed on top of the one or more airgaps, the copper filled trenches, and portions of the oxide liner.
1. A semiconductor device comprising:
a dielectric layer formed on a bottom layer;
metal lines formed in the dielectric layer, wherein a metal liner lines the metal lines;
an oxide liner lining a left side, a right side, and a bottom part of the metal liner, the oxide liner being outside of the metal lines and on top of portions of the dielectric layer, wherein a portion of the oxide liner is underneath the metal lines such that the portion of the oxide liner separates the bottom part of the metal liner from the bottom layer, the portion of the oxide liner being adjacent to both the bottom part of the metal liner and the bottom layer while underneath the metal lines;
one or more airgaps formed between the metal lines, the one or more airgaps corresponding to areas in which part of the oxide liner and the dielectric layer have been removed, wherein the one or more airgaps have sidewalls formed of the oxide liner; and
a cap layer formed on top of the one or more airgaps, the metal lines, and the oxide liner.
2. The semiconductor device of claim 1 , wherein the oxide liner does not touch the metal lines.
3. The semiconductor device of claim 2 , wherein the oxide liner lines the metal liner, without being over a top part of the metal liner.
4. The semiconductor device of claim 1 , wherein locations with no airgaps have the bottom layer, the dielectric layer on top of the bottom layer, the oxide liner on top of the dielectric layer, and the cap layer on top of the oxide liner.
5. The semiconductor device of claim 1 , wherein the one or more airgaps have the bottom layer directly as a floor.
6. The semiconductor device of claim 1 , wherein the one or more airgaps have a wider bottom part than middle part.
7. The semiconductor device of claim 1 , wherein the one or more airgaps have a wider top part than middle part.
8. The semiconductor device of claim 1 , wherein the one or more airgaps have the metal lines as upper sidewalls.
9. The semiconductor device of claim 1 , wherein the one or more airgaps extend longitudinally.
10. An airgap structure comprising:
a dielectric layer formed on an underlying layer;
copper filled trenches in the dielectric layer, a metal liner lining the copper filled trenches, wherein an oxide liner lines a left side, a right side, and a bottom part of the metal liner and covers the dielectric layer, wherein a portion of the oxide liner is underneath the copper filled trenches such that the portion of the oxide liner separates the bottom part of the metal liner from the underlying layer, the portion of the oxide liner being adjacent to both the bottom part of the metal liner and the underlying layer while underneath the copper filled trenches;
one or more airgaps formed between the copper filled trenches in areas in which the oxide liner was not present on the dielectric layer, wherein the one or more airgaps have sidewalls formed of the oxide liner; and
a cap layer on top of the one or more airgaps, the copper filled trenches, and portions of the oxide liner.
11. The structure of claim 10 , wherein covered portions of the dielectric layer remain after the one or more airgaps is formed, and the covered portions of the dielectric layer are covered by the oxide liner.
12. The structure of claim 11 , wherein the covered portions of the dielectric layer support the cap layer.
13. The structure of claim 10 , wherein locations with no airgaps have the underlying layer, the dielectric layer on top of the underlying layer, the oxide liner on top of the dielectric layer, and the cap layer on top of the oxide liner.
14. The structure of claim 10 , wherein the one or more airgaps have the underlying layer as a floor.
15. The structure of claim 10 , wherein the one or more airgaps have a wider bottom part than middle part.
16. The structure of claim 10 , wherein the one or more airgaps have a wider top part than middle part.
17. The structure of claim 10 , wherein the one or more airgaps have the copper filled trenches as upper sidewalls.
18. The structure of claim 10 , wherein the one or more airgaps extend longitudinally.