Semiconductor device including memory cell array with transistors disposed in different active regions

1. A semiconductor device comprising:

a memory cell, including:

a first conductivity type first transistor coupled between a first voltage and a first node;

a second conductivity type first transistor coupled between the first node and a second voltage;

a second conductivity type second transistor coupled between the first node and the second voltage in parallel with the second conductivity type first transistor;

a first conductivity type second transistor coupled between the first voltage and a second node;

a second conductivity type third transistor coupled between the second node and the second voltage;

a second conductivity type fourth transistor coupled between the second node and the second voltage in parallel with the second conductivity type third transistor;

a second conductivity type fifth transistor coupled between the first node and a first bit line; and

a second conductivity type sixth transistor coupled between the second node and a second bit line,

wherein the second conductivity type first transistor, the second conductivity type fourth transistor and the second conductivity type fifth transistor are disposed in a first active region,

wherein the first conductivity type first transistor and the first conductivity type second transistor are disposed in a second active region,

wherein the second conductivity type second transistor, the second conductivity type third transistor, and the second conductivity type sixth transistor are disposed in a third active region,

wherein the first active region is formed on a first P-well,

wherein the third active region is formed on a second P-well, and

wherein the second active region is formed on a first N-well which is disposed between the first P-well and the second P-well,

wherein a first gate wiring extends in a first direction over the first, second, and third active regions,

wherein a second gate wiring extends in the first direction over the first, second, and third active regions,

wherein a third gate wiring extends in the first direction over both the first active region and the N-well, and

wherein a fourth gate wiring extends in the first direction over both the third active region and the N-well.

2. The semiconductor device according to claim 1 ,

wherein a source region of the first conductivity type first transistor is shared by the first conductivity type second transistor as a source region of the first conductivity type second transistor.

3. The semiconductor device according to claim 2 , the memory cell further including:

a first plug coupled to a drain region of the first conductivity type first transistor;

a second plug coupled to a drain region of the first conductivity type second transistor; and

a third plug coupled to the source region of the first conductivity type first transistor,

wherein the third plug disposed between the first plug and the second plug.

4. The semiconductor device according to claim 1 , the memory cell further including:

a second conductivity type seventh transistor coupled between the first node and a third bit line; and

a second conductivity type eighth transistor coupled between the second node and a fourth bit line,

wherein the second conductivity type seventh transistor is disposed in the third active region,

wherein the second conductivity type eighth transistor is disposed in the first active region,

wherein a fifth gate wiring extends in the first direction over the third active region, and

wherein a sixth gate wiring extends in the first direction over the first active region.

5. The semiconductor device according to claim 1 , wherein each of the first, second, and third active regions is rectangular with longer side in a second direction.