Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber; and
forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.
2. The method of claim 1 , wherein in the act of forming the first layer, the halogen element is desorbed by allowing the hydrogen and the halogen element contained in the precursor to react with each other.
3. The method of claim 1 , wherein a processing condition in the act of forming the first layer is a condition in which the hydrogen and the halogen element contained in the precursor react with each other and in which the halogen element is desorbed.
4. The method of claim 1 , wherein in the act of forming the first layer, the precursor is supplied into the process chamber and confined in the process chamber while closing an exhaust system configured to exhaust the interior of the process chamber.
5. The method of claim 1 , wherein in the act of forming the first layer, a processing condition in which the hydrogen and the halogen element contained in the precursor react with each other and in which the halogen element is desorbed, is created by supplying the precursor into the process chamber and confining the precursor in the process chamber while closing an exhaust system configured to exhaust the interior of the process chamber.
6. The method of claim 1 , wherein a substance represented by a composition formula, Si x H y Cl z (where each of x, y and z is an integer of 1 or more), is used as the precursor.
7. The method of claim 1 , wherein at least one substance selected from a group consisting of SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , Si 2 H 5 Cl, Si 2 H 4 Cl 2 , Si 2 H 3 Cl 3 , Si 2 H 2 Cl 4 , Si 3 H 5 Cl and Si 3 H 4 Cl 2 is used as the precursor.
8. The method of claim 1 , wherein a substance, in which the number of hydrogen atoms contained in one molecule is equal to the number of chlorine atoms contained in one molecule, is used as the precursor.
9. The method of claim 1 , wherein in the act of forming the first layer, a hydrogen-free chlorine-containing gas is supplied to the substrate together with the precursor.
10. The method of claim 1 , wherein in the act of forming the first layer, a chlorine-free hydrogen-containing gas is supplied to the substrate together with the precursor.
11. The method of claim 1 , wherein a hydrogen-free oxygen-containing gas is used as the reactant.
12. The method of claim 1 , wherein at least one selected from a group consisting of an O 3 gas and a plasma-excited oxygen-containing gas is used as the reactant.
13. The method of claim 1 , wherein at least one selected from a group consisting of an O 3 gas, a plasma-excited O 2 gas, a plasma-excited NO gas, a plasma-excited N 2 O gas and a plasma-excited NO 2 gas is used as the reactant.
14. The method of claim 1 , further comprising:
after performing the act of forming the film on the substrate, forming a cap layer on the film in a state in which the substrate having the film formed thereon is accommodated in the process chamber without carrying out the substrate from the interior of the process chamber.
15. The method of claim 14 , wherein the cap layer is formed by a material differing in etching resistance from the film.
16. The method of claim 14 , wherein the cap layer has a thickness of several atomic layers or more and several tens atomic layers or less.
17. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber; and
forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.