Enhanced etching processes using remote plasma sources
Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.
1. A method of etching a patterned substrate, the method comprising:
flowing an oxygen-containing precursor into a remote plasma system (RPS) unit fluidly coupled with a substrate processing region while forming a plasma in the RPS unit to produce oxygen-containing plasma effluents;
flowing an unexcited fluorine-containing precursor through an inlet assembly coupled with the RPS unit, wherein the fluorine-containing precursor bypasses the RPS unit and flows into a second remote plasma region fluidly coupled in series between the RPS unit and the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents in the second remote plasma region;
flowing the oxygen-containing plasma effluents into the second remote plasma region;
flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents together into the processing region; and
etching a patterned substrate housed in the substrate processing region with the oxygen-containing and fluorine-containing plasma effluents.
2. The method of claim 1 , wherein at least one additional precursor is flowed with one or both of the oxygen-containing precursor or the fluorine-containing precursor, and the additional precursor is selected from the group consisting of helium, argon, nitrogen, and molecular hydrogen (H 2 ).
3. The method of claim 1 , wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride, and xenon difluoride.
4. The method of claim 3 , wherein the fluorine-containing precursor comprises nitrogen trifluoride, and wherein the fluorine-containing plasma effluents consist essentially of NF* and NF 2 * species.
5. The method of claim 1 , wherein the oxygen-containing precursor comprises a precursor selected from the group consisting of molecular oxygen, ozone, nitrous oxide, nitric oxide, and nitrogen dioxide.
6. The method of claim 1 , wherein the second remote plasma region is configured to produce a capacitively-coupled plasma.
7. The method of claim 6 , wherein the plasma in the second remote plasma region is operated at a power level of less than or about 200 Watts.
8. The method of claim 1 , wherein the fluorine-containing precursor bypasses the first plasma region.
9. The method of claim 1 , wherein the substrate temperature is maintained at or below about 50° C. during the etch process.
10. A method of etching a patterned substrate, the method comprising:
flowing an oxygen-containing precursor into a remote plasma system (RPS) unit fluidly coupled with a second remote plasma region of a substrate processing chamber while forming a plasma in the RPS unit to produce oxygen-containing plasma effluents;
delivering the oxygen-containing plasma effluents into the second remote plasma region;
flowing an unexcited fluorine-containing precursor through an inlet assembly coupled with the RPS unit, wherein the fluorine-containing precursor bypasses the RPS unit and flows into the second remote plasma region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents, wherein the second remote plasma region is fluidly coupled with a substrate processing region;
delivering the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the substrate processing region; and
etching a patterned substrate housed in the substrate processing region with the oxygen-containing and fluorine-containing plasma effluents.
11. The method of claim 10 , wherein the plasma in the second remote plasma region is a capacitively-coupled plasma.
12. The method of claim 11 , wherein the plasma in the second remote plasma region is operated at a power level of less than or about 200 Watts.
13. The method of claim 10 , wherein the first remote plasma region is operated at a first plasma power and the second remote plasma region is operated at a second plasma power, and wherein the first plasma power and second plasma power are different from one another.