Method for making a semiconductor device with sidewal spacers for confinig epitaxial growth

1. A method for making a semiconductor device comprising:

forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;

forming at least one dielectric layer, the at least one dielectric layer covering the plurality of semiconductor fins and the substrate between adjacent semiconductor fins;

forming a pair of sidewall spacers adjacent outermost semiconductor fins at the end portion of the plurality of semiconductor fins;

removing the at least one dielectric layer and end portion of the plurality of semiconductor fins between the pair of sidewall spacers; and

forming source/drain regions between the pair of sidewall spacers.

2. The method according to claim 1 forming source/drain regions comprises epitaxially growing the source/drain regions.

3. The method according to claim 2 wherein the source/drain regions comprise silicon.

4. The method according to claim 2 wherein the source/drain regions comprise silicon germanium.

5. The method according to claim 1 wherein forming the at least one dielectric layer comprises:

forming a first dielectric layer comprising a first dielectric material on the end portion of the plurality of semiconductor fins; and

forming a second dielectric layer comprising a second dielectric material different than the first dielectric material on the first dielectric layer and with the second dielectric material filling the space between adjacent semiconductor fins.

6. The method according to claim 5 further comprising, before forming the sidewall spacers, removing portions of the second dielectric layer laterally adjacent the outermost semiconductor fins and above the semiconductor fins while retaining portions of the second dielectric layer filling the space between adjacent semiconductor fins.

7. The method according to claim 5 wherein forming the second dielectric layer comprises atomic layer deposition thereof.

8. The method according to claim 1 further comprising forming a gate overlying the plurality of semiconductor fins.

9. The method according to claim 1 wherein the semiconductor fins comprise silicon.

10. The method according to claim 1 wherein the substrate comprises a semiconductor substrate.

11. A method for making a semiconductor device comprising:

forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;

forming a first dielectric layer comprising a first dielectric material adjacent an end portion of the plurality of semiconductor fins;

forming a second dielectric layer comprising a second dielectric material different than the first dielectric material on the first dielectric layer and with the second dielectric material filling the space between adjacent semiconductor fins;

forming a pair of sidewall spacers adjacent outermost semiconductor fins at the end portion of the plurality of semiconductor fins;

removing at least portions of the second dielectric layer and the end portion of the plurality of semiconductor fins between the pair of sidewall spacers; and

epitaxially forming source/drain regions between the pair of sidewall spacers.

12. The method according to claim 11 further comprising, before forming the sidewall spacers, removing portions of the second dielectric layer laterally adjacent the outermost semiconductor fins and above the semiconductor fins while retaining portions of the second dielectric layer filling the space between adjacent semiconductor fins.

13. The method according to claim 11 wherein forming the second dielectric layer comprises atomic layer deposition thereof.

14. The method according to claim 11 further comprising forming a gate overlying the plurality of semiconductor fins.

15. The method according to claim 11 wherein the semiconductor fins and the substrate each comprises silicon.