IP Library › Granted Patent US 10,510,528
Granted Patent B2
US 10,510,528 · App. 15/180,631 · Granted Dec 17, 2019

Substrate processing method

Inventor: Tetsuya Emoto (Kyoto, JP)
Assignee: SCREEN Holdings Co., Ltd.
H01L21/02057B08B3/10H01L21/67028H01L21/67051H01L21/67103H01L21/68728C11D11/0047
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Quick Facts
Patent No.
US 10,510,528
App. No.
15/180,631
Granted
Dec 17, 2019
Kind
B2
Abstract

A substrate processing method includes a replacement step of replacing a rinse liquid adhered to the front surface of a substrate with a low surface tension liquid whose surface tension is lower than that of the rinse liquid, where the replacement step includes a low surface tension liquid supply step of supplying the low surface tension liquid to the front surface while supplying a heating fluid to the rear surface on a side opposite to the front surface and a post-heating step of supplying the heating fluid to the rear surface on the side opposite to the front surface of the substrate, in a state in which the supply of the low surface tension liquid to the front surface is stopped, before the start of a spin dry step after the completion of the low surface tension liquid supply step.

Claims (23)

1. A substrate processing method comprising:

a replacement step of replacing a rinse liquid adhered to a front surface of a substrate with a low surface tension liquid whose surface tension is lower than a surface tension of the rinse liquid; and

a spin dry step of rotating, after completion of the replacement step, the substrate about a predetermined rotation axis to spin off the low surface tension liquid so as to dry the front surface,

wherein the replacement step includes:

a low surface tension liquid supply step of supplying the low surface tension liquid to the front surface while supplying a heating fluid to a rear surface on a side opposite to the front surface; and

a post-heating step of supplying the heating fluid to the rear surface on the side opposite to the front surface of the substrate, in a state in which the supply of the low surface tension liquid to the front surface is stopped, before start of the spin dry step after completion of the low surface tension liquid supply step,

wherein the low surface tension liquid supply step includes a step of discharging the low surface tension liquid from a low surface tension liquid nozzle which is located above the front surface of the substrate,

the spin dry step is performed in a state in which an opposite member is opposite above the front surface of the substrate and

in parallel with the post-heating step, the low surface tension liquid nozzle is retracted from above the substrate, and the opposite member is located above the substrate.

2. A substrate processing method comprising:

a replacement step of replacing a rinse liquid adhered to a front surface of a substrate with a low surface tension liquid whose surface tension is lower than a surface tension of the rinse liquid; and

a spin dry step of rotating, after completion of the replacement step, the substrate about a predetermined rotation axis to spin off the low surface tension liquid so as to dry the front surface,

wherein the replacement step includes:

a low surface tension liquid supply step of supplying the low surface tension liquid to the front surface while supplying a heating fluid to a rear surface on a side opposite to the front surface; and

a post-heating step of supplying the heating fluid to the rear surface on the side opposite to the front surface of the substrate, in a state in which the supply of the low surface tension liquid to the front surface is stopped, before start of the spin dry step after completion of the low surface tension liquid supply step,

wherein the low surface tension liquid supply step includes a droplet supply step of supplying a droplet of an organic solvent produced by mixing the organic solvent with a gas to at least an outer circumferential portion of the front surface,

wherein the droplet supply step includes:

a droplet discharge step of discharging the droplet of the organic solvent from a two-fluid nozzle to a discharge region within the front surface; and

a discharge region movement step of moving the discharge region between a center portion of the front surface and a circumferential edge portion of the front surface in parallel with the droplet discharge step.

3. The substrate processing method according to claim 2 ,

wherein the low surface tension liquid supply step includes a first liquid film formation step which is performed before the droplet supply step and which supplies the organic solvent to the front surface so as to form a liquid film of the organic solvent covering the entire front surface.

4. The substrate processing method according to claim 3 ,

wherein the low surface tension liquid supply step includes a second liquid film formation step which is performed after the droplet supply step and which supplies the organic solvent to the front surface so as to form a liquid film of the organic solvent covering the entire front surface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2016
From: EMOTO, TETSUYA
To: SCREEN HOLDINGS CO., LTD.
Reel/Frame 038897/0179 →
Priority Claims (1)
JP 2015-121150 · Jun 16, 2015 · national
Continuity (1)
Related Publication 20160372320A1 · Dec 22, 2016